Datasheet M295V002 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	M295V002	2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory M29F002T, M29F002NT M29F002B 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits MEMORY	ST Microelectronics

M295V Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
M295V160BB70N3T	16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top	ST Microelectronics
M295V100BB	1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory M29F100BT M29F100BB 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 5 MEMORY BLOCKS – 1 Boot Block (To	ST Microelectronics
M295V512B70NZ1T	512 Kbit 64Kb x8 / Bulk Single Supply Flash Memory M29F512B 512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte typical PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embe	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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