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M295V040 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
2 M295V040   4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory

M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Data Polling and Toggle bits Protocol for P/E.C. Status MEMORY ERASE in BLOCKS – 8 Uniform Blocks of 64 KBytes each – Block Protection – Multibl
ST Microelectronics
ST Microelectronics
pdf
1 M295V040B   4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory

M29F040B 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte typical 8 UNIFORM 64 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits PLCC32 (K) TSOP32 (N) 8 x 20mm s s s s s ERASE SUSPEND and RESUME MODES – Read and Program another Block during E
ST Microelectronics
ST Microelectronics
pdf



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Fairchild Semiconductor
Fairchild Semiconductor
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