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M29DW323DT90N1T даташитФункция этой детали – «32 Mbit 4mb X8 Or 2mb X16 /». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M29DW323DT90N1T | ST Microelectronics |
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program
TSOP48 (N) 12 x 20mm
s
MEMORY BLOCKS – Dual Bank Memory Array: 8Mbit+24Mbit – Parameter Blocks (Top or Bottom Location)
s
DUAL OPERATIONS – Read in one |
Это результат поиска, начинающийся с "29DW323DT90N1T", "M29DW323DT90" |
Номер в каталоге | Производители | Описание | |
M29DW323DT90N1 | ST Microelectronics |
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
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M29DW323DT90N1E | ST Microelectronics |
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
|
M29DW323DT90N1F | ST Microelectronics |
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
|
M29DW323DT90N6 | ST Microelectronics |
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
|
M29DW323DT90N6E | ST Microelectronics |
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
|
M29DW323DT90N6F | ST Microelectronics |
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
Последние обновления
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2N3904 | Unisonic Technologies |
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