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Datasheet M29DW324 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 99 | M29DW324 | FLASH NOR HIGH DENSITY & CONSUMER FLASH NOR HIGH DENSITY & CONSUMER
M29DWxxx FAMILY Multiple Bank
May, 2004
HD & Cons. Division -VAM29DW.ppt – ptfl0402-504
STMicroelectronics
www.st.com/flash
Family Overview
¾Densities from 32Mb to 64Mb ¾Wide application area covered ¾0.15µm process technology
¾technology shrink on going |
 ST Microelectronics |
 |
| 98 | M29DW324DB | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory M29DW324DT M29DW324DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µ |
ST Microelectronics |
|
| 97 | M29DW324DB70N1 | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory M29DW324DT M29DW324DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µ |
ST Microelectronics |
|
| 96 | M29DW324DB70N1E | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory M29DW324DT M29DW324DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
– VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µ |
ST Microelectronics |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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