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M29F100 даташитФункция этой детали – «1 Mbit 128kb X8 Or 64kb X16 /». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M29F100 | ST Microelectronics |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory M29F100BT M29F100BB
1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 5 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 2 Main Blocks
1 44
s s
s
s
PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy O |
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M29F100B | ST Microelectronics |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory M29F100T M29F100B
1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory
5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – Status Register bits and Ready/Busy Output MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION M |
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M29F100BB | ST Microelectronics |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory M29F100BT M29F100BB
1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 5 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 2 Main Blocks
1 44
s s
s
s
PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy O |
|
M29F100BT | ST Microelectronics |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory |
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M29F100T | ST Microelectronics |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory M29F100T M29F100B
1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory
5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – Status Register bits and Ready/Busy Output MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION M |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |