DataSheet26.com


M29W160DT даташит

Функция этой детали – «16 Mbit 2mb X8 Or 1mb X16 /».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
M29W160DT ST Microelectronics
ST Microelectronics
  16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory

M29W160DT M29W160DB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s s Figure 1. Packages ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 44 s 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks 1 s PROGRAM/ERASE CONTROLLER – Embedded Program and Erase algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block
pdf

Это результат поиска, начинающийся с "29W160DT", "M29W16"

Номер в каталоге Производители Описание PDF
A29160A AMIC Technology
AMIC Technology

Boot Sector Flash Memory

A29160A Series 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 1.0 1.1 1.2 History Initial issue Update ICC3, ICC4, Absolute Maximum Ratin
pdf
A29160B AMIC
AMIC

Boot Sector Flash Memory

A29160B Series Preliminary 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History 0.0 Initial issue Issue Date June 16, 2016 Remark Prelimi
pdf
AN29160AA Matsushita
Matsushita

Transceiver

Total Pages Code No.: 60 Page 1 Product Standards Part No. Package Code No. AN29160AA HSOP056-P-0300A Analogue LSI Business Unit Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by Applied by Checked by Prepared by T.Higuchi M.Hiramatsu T.Shimazu
pdf
M29W160BB ST Microelectronics
ST Microelectronics

16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory

M29W160BT M29W160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS –
pdf
M29W160BT ST Microelectronics
ST Microelectronics

16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory

M29W160BT M29W160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS –
pdf
M29W160DB ST Microelectronics
ST Microelectronics

16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory

M29W160DT M29W160DB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s s Figure 1. Packages ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typ
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты