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M29W160DT даташитФункция этой детали – «16 Mbit 2mb X8 Or 1mb X16 /». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M29W160DT | ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory M29W160DT M29W160DB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
s s
Figure 1. Packages
ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical
44
s
35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks
1
s
PROGRAM/ERASE CONTROLLER – Embedded Program and Erase algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block |
Это результат поиска, начинающийся с "29W160DT", "M29W16" |
Номер в каталоге | Производители | Описание | |
A29160A | AMIC Technology |
Boot Sector Flash Memory A29160A Series
2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
Revision History
Rev. No.
0.0 1.0 1.1
1.2
History
Initial issue Update ICC3, ICC4, Absolute Maximum Ratin |
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A29160B | AMIC |
Boot Sector Flash Memory A29160B Series
Preliminary
2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
Revision History
Rev. No. History
0.0 Initial issue
Issue Date
June 16, 2016
Remark
Prelimi |
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AN29160AA | Matsushita |
Transceiver Total Pages Code No.: 60
Page 1
Product Standards
Part No. Package Code No.
AN29160AA
HSOP056-P-0300A
Analogue LSI Business Unit Semiconductor Company Matsushita Electric Industrial Co., Ltd.
Established by Applied by Checked by Prepared by
T.Higuchi
M.Hiramatsu
T.Shimazu
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M29W160BB | ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory M29W160BT M29W160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Low Voltage Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS – |
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M29W160BT | ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory M29W160BT M29W160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Low Voltage Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS – |
|
M29W160DB | ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory M29W160DT M29W160DB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
s s
Figure 1. Packages
ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typ |
[1]  
Последние обновления
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2N3904 | Unisonic Technologies |
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