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Datasheet M29W400DB Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | M29W400DB | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY B |
 ST Microelectronics |
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| 1 | M29W400DB | 3V supply Flash memory M29W400DT M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
Features
Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read
Access time: 45, 55, 70 ns
Programming time – 10 μs per byte/word typical
11 memory blocks – 1 boot block (top or |
 Numonyx |
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