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M29W400DT45N6T даташитФункция этой детали – «4 Mbit (512kb X8 Or 256kb X16 /». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M29W400DT45N6T | ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks
SO44 (M)
s
s
PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another |
Это результат поиска, начинающийся с "29W400DT45N6T", "M29W400DT45" |
Номер в каталоге | Производители | Описание | |
M29W400DT45M6E | ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
|
M29W400DT45M6F | ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
|
M29W400DT45M6T | ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
|
M29W400DT45N1E | ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
|
M29W400DT45N1F | ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
|
M29W400DT45N1T | ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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