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M29W400DT55ZA1T даташит

Функция этой детали – «4 Mbit (512kb X8 Or 256kb X16 /».



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Номер в каталоге Производители Описание PDF
M29W400DT55ZA1T ST Microelectronics
ST Microelectronics
  4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks SO44 (M) s s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another
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Это результат поиска, начинающийся с "29W400DT55ZA1T", "M29W400DT55Z"

Номер в каталоге Производители Описание PDF
M29W400DT55ZA1E ST Microelectronics
ST Microelectronics

4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word
pdf
M29W400DT55ZA1F ST Microelectronics
ST Microelectronics

4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word
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M29W400DT55ZA6E ST Microelectronics
ST Microelectronics

4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word
pdf
M29W400DT55ZA6F ST Microelectronics
ST Microelectronics

4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word
pdf
M29W400DT55ZA6T ST Microelectronics
ST Microelectronics

4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory

M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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