|
M29W640DB70ZA6F даташитФункция этой детали – «64 Mbit 8mb X8 Or 4mb X16 /». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M29W640DB70ZA6F | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs per Byte/Word typical – Double Word Programming Option
s
135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 Main Blocks, 64 KBytes each
TSOP48 (N) 12 x 20mm
s
PROG |
Это результат поиска, начинающийся с "29W640DB70ZA6F", "M29W640DB70Z" |
Номер в каталоге | Производители | Описание | |
M29W640DB70ZA1E | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
|
M29W640DB70ZA1F | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
|
M29W640DB70ZA1T | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
|
M29W640DB70ZA6E | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
|
M29W640DB70ZA6T | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |