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M29W640DB70ZA6F даташит

Функция этой детали – «64 Mbit 8mb X8 Or 4mb X16 /».



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Номер в каталоге Производители Описание PDF
M29W640DB70ZA6F ST Microelectronics
ST Microelectronics
  64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs per Byte/Word typical – Double Word Programming Option s 135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 Main Blocks, 64 KBytes each TSOP48 (N) 12 x 20mm s PROG
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Это результат поиска, начинающийся с "29W640DB70ZA6F", "M29W640DB70Z"

Номер в каталоге Производители Описание PDF
M29W640DB70ZA1E ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
pdf
M29W640DB70ZA1F ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
pdf
M29W640DB70ZA1T ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
pdf
M29W640DB70ZA6E ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
pdf
M29W640DB70ZA6T ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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