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M29W640FT даташит

Функция этой детали – «(m29w640fb / M29w640ft) 64m 3v Supply Flash Memory».



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Номер в каталоге Производители Описание PDF
M29W640FT ST Microelectronics
ST Microelectronics
  (M29W640FB / M29W640FT) 64M 3V Supply Flash Memory

M29W640FT M29W640FB 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Features summary ■ Figure 1. Packages Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program 135 memory blocks – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bo
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Это результат поиска, начинающийся с "29W640FT", "M29W64"

Номер в каталоге Производители Описание PDF
M29W640D ST Microelectronics
ST Microelectronics

FLASH NOR HIGH DENSITY & CONSUMER

FLASH NOR HIGH DENSITY & CONSUMER M29DWxxx FAMILY Multiple Bank May, 2004 HD & Cons. Division -VAM29DW.ppt – ptfl0402-504 STMicroelectronics www.st.com/flash Family Overview ¾Densities from 32Mb to 64Mb ¾Wide application area covered ¾0.15µm process technology ¾techno
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M29W640DB ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
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M29W640DB70N1E ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
pdf
M29W640DB70N1F ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
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M29W640DB70N1T ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
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M29W640DB70N6E ST Microelectronics
ST Microelectronics

64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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