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M29W640FT даташитФункция этой детали – «(m29w640fb / M29w640ft) 64m 3v Supply Flash Memory». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M29W640FT | ST Microelectronics |
(M29W640FB / M29W640FT) 64M 3V Supply Flash Memory
M29W640FT M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
Features summary
■
Figure 1.
Packages
Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program 135 memory blocks – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bo |
Это результат поиска, начинающийся с "29W640FT", "M29W64" |
Номер в каталоге | Производители | Описание | |
M29W640D | ST Microelectronics |
FLASH NOR HIGH DENSITY & CONSUMER FLASH NOR HIGH DENSITY & CONSUMER
M29DWxxx FAMILY Multiple Bank
May, 2004
HD & Cons. Division -VAM29DW.ppt – ptfl0402-504
STMicroelectronics
www.st.com/flash
Family Overview
¾Densities from 32Mb to 64Mb ¾Wide application area covered ¾0.15µm process technology
¾techno |
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M29W640DB | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
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M29W640DB70N1E | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
|
M29W640DB70N1F | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
|
M29W640DB70N1T | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
|
M29W640DB70N6E | ST Microelectronics |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAM |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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