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M29W641DU12N1E даташитФункция этой детали – «64 Mbit 4mb X16 / Uniform Block 3v». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M29W641DU12N1E | ST Microelectronics |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory M29W641DH, M29W641DL M29W641DU
64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90, 100 and 120ns PROGRAMMING TIME – 10 µs typical – Double Word Program option
s s
128 UNIFORM, 32-KWord MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Program and Erase algorithms ERASE SUSPEND and RESUME MO |
Это результат поиска, начинающийся с "29W641DU12N1E", "M29W641DU12" |
Номер в каталоге | Производители | Описание | |
M29W641DU12N1F | ST Microelectronics |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory M29W641DH, M29W641DL M29W641DU
64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)
s s
Figure 1. Pac |
|
M29W641DU12N1T | ST Microelectronics |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory M29W641DH, M29W641DL M29W641DU
64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)
s s
Figure 1. Pac |
|
M29W641DU12N6E | ST Microelectronics |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory M29W641DH, M29W641DL M29W641DU
64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)
s s
Figure 1. Pac |
|
M29W641DU12N6F | ST Microelectronics |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory M29W641DH, M29W641DL M29W641DU
64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)
s s
Figure 1. Pac |
|
M29W641DU12N6T | ST Microelectronics |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory M29W641DH, M29W641DL M29W641DU
64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)
s s
Figure 1. Pac |
|
M29W641DU12ZA1E | ST Microelectronics |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory M29W641DH, M29W641DL M29W641DU
64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)
s s
Figure 1. Pac |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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