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M29W641DU70N6T даташит

Функция этой детали – «64 Mbit 4mb X16 / Uniform Block 3v».



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Номер в каталоге Производители Описание PDF
M29W641DU70N6T ST Microelectronics
ST Microelectronics
  64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory

M29W641DH, M29W641DL M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90, 100 and 120ns PROGRAMMING TIME – 10 µs typical – Double Word Program option s s 128 UNIFORM, 32-KWord MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Program and Erase algorithms ERASE SUSPEND and RESUME MO
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Это результат поиска, начинающийся с "29W641DU70N6T", "M29W641DU70"

Номер в каталоге Производители Описание PDF
M29W641DU70N1E ST Microelectronics
ST Microelectronics

64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory

M29W641DH, M29W641DL M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional) s s Figure 1. Pac
pdf
M29W641DU70N1F ST Microelectronics
ST Microelectronics

64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory

M29W641DH, M29W641DL M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional) s s Figure 1. Pac
pdf
M29W641DU70N1T ST Microelectronics
ST Microelectronics

64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory

M29W641DH, M29W641DL M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional) s s Figure 1. Pac
pdf
M29W641DU70N6E ST Microelectronics
ST Microelectronics

64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory

M29W641DH, M29W641DL M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional) s s Figure 1. Pac
pdf
M29W641DU70N6F ST Microelectronics
ST Microelectronics

64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory

M29W641DH, M29W641DL M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional) s s Figure 1. Pac
pdf
M29W641DU70ZA1E ST Microelectronics
ST Microelectronics

64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory

M29W641DH, M29W641DL M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional) s s Figure 1. Pac
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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