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Datasheet M29W800D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | M29W800D | 8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory M29W800DT M29W800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block ( |
 ST Microelectronics |
 |
| 4 | M29W800DB | 3V supply flash memory M29W800DT M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
Features
Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read
Access times: 45, 70, 90 ns
Programming time – 10 μs per byte/word typical
19 memory blocks – 1 boot block (top |
 Numonyx |
|
| 3 | M29W800DB | 8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory M29W800DT M29W800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block ( |
ST Microelectronics |
|
| 2 | M29W800DT | 3V supply flash memory M29W800DT M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
Features
Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read
Access times: 45, 70, 90 ns
Programming time – 10 μs per byte/word typical
19 memory blocks – 1 boot block (top |
Numonyx |
|
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