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M30810MC-XXXGP даташитФункция этой детали – «Single-chip 16/32-bit Cmos MICrocomputer». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M30810MC-XXXGP | Renesas |
SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER M32C/81 Group
SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER
REJ03B0031-0100Z Rev.1.00
Jun. 01, 2004
1. Overview
The M32C/81 group microcomputer is a single-chip control unit that utilizes high-performance silicon gate CMOS technology with the M32C/80 series CPU core. The M32C/81 group is available in 144-pin and 100pin plastic molded LQFP/QFP packages. With a 16-Mbyte address space, this microcomputer combines advanced instruction manipulation capabilities to process complex instructions by less bytes and execute instructi |
Это результат поиска, начинающийся с "30810MC", "M30810MC-XX" |
Номер в каталоге | Производители | Описание | |
M30810MC-XXXFP | Renesas |
SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER M32C/81 Group
SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER
REJ03B0031-0100Z Rev.1.00
Jun. 01, 2004
1. Overview
The M32C/81 group microcomputer is a single-chip control unit that utilizes high-performance silicon gate CMOS technology with the M32C/80 series CPU core. The M32C/81 gro |
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C30810 | PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors N-Type Silicon PIN Photodetectors
C30807, C30808, C30809, C30810, C30822, C30831
EVERYTHING IN A NEW LIGHT.
Description
This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range fr |
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M53230810CB0 | Samsung Semiconductor |
(M532308x0CB0/CW0) DRAM Module
DRAM MODULE
M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4M |
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M53230810CW0 | Samsung Semiconductor |
(M532308x0CB0/CW0) DRAM Module
DRAM MODULE
M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4M |
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M53230810DB0 | Samsung Semiconductor |
(M532308x0DB0/DW0) DRAM Module
DRAM MODULE
M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M5323080(1)0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D consists of sixteen CMOS 4M |
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M53230810DW0 | Samsung Semiconductor |
(M532308x0DB0/DW0) DRAM Module
DRAM MODULE
M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M5323080(1)0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D consists of sixteen CMOS 4M |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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