DataSheet26.com


M30810MC-XXXGP даташит

Функция этой детали – «Single-chip 16/32-bit Cmos MICrocomputer».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
M30810MC-XXXGP Renesas
Renesas
  SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER

M32C/81 Group SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER REJ03B0031-0100Z Rev.1.00 Jun. 01, 2004 1. Overview The M32C/81 group microcomputer is a single-chip control unit that utilizes high-performance silicon gate CMOS technology with the M32C/80 series CPU core. The M32C/81 group is available in 144-pin and 100pin plastic molded LQFP/QFP packages. With a 16-Mbyte address space, this microcomputer combines advanced instruction manipulation capabilities to process complex instructions by less bytes and execute instructi
pdf

Это результат поиска, начинающийся с "30810MC", "M30810MC-XX"

Номер в каталоге Производители Описание PDF
M30810MC-XXXFP Renesas
Renesas

SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER

M32C/81 Group SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER REJ03B0031-0100Z Rev.1.00 Jun. 01, 2004 1. Overview The M32C/81 group microcomputer is a single-chip control unit that utilizes high-performance silicon gate CMOS technology with the M32C/80 series CPU core. The M32C/81 gro
pdf
C30810 PerkinElmer Optoelectronics
PerkinElmer Optoelectronics

(C30807 - C30831) N-Type Silicon PIN Photodetectors

N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range fr
pdf
M53230810CB0 Samsung Semiconductor
Samsung Semiconductor

(M532308x0CB0/CW0) DRAM Module

DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4M
pdf
M53230810CW0 Samsung Semiconductor
Samsung Semiconductor

(M532308x0CB0/CW0) DRAM Module

DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4M
pdf
M53230810DB0 Samsung Semiconductor
Samsung Semiconductor

(M532308x0DB0/DW0) DRAM Module

DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D consists of sixteen CMOS 4M
pdf
M53230810DW0 Samsung Semiconductor
Samsung Semiconductor

(M532308x0DB0/DW0) DRAM Module

DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D consists of sixteen CMOS 4M
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты