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M36DR432D даташитФункция этой детали – «32 Mbit 2mb X16 / Dual Bank /». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M36DR432D | ST Microelectronics |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product M36DR432C M36DR432D
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VDDF = VDDS =1.9V to 2.1V
s s s
Figure 1. Packages
– VPPF = 12V for Fast Program (optional) ACCESS TIME: 85,100ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36DR432C: 00A4h – Bottom Device Code, M36DR432D: 00A5h
FBGA
FLASH MEMORY s 32 Mbit (2Mb x16) BOOT BLOCK – Parameter Blocks (Top or Bot |
Это результат поиска, начинающийся с "36DR432D", "M36DR4" |
Номер в каталоге | Производители | Описание | |
M36DR432-ZAT | ST Microelectronics |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product M36DR432A M36DR432B
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY s SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V
s s s
Figure 1. Packages
– VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns LO |
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M36DR432-ZAT | ST Microelectronics |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product M36DR432A M36DR432B
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY s SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V
s s s
Figure 1. Packages
– VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns LO |
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M36DR432A | ST Microelectronics |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product M36DR432A M36DR432B
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY s SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V
s s s
Figure 1. Packages
– VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns LO |
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M36DR432AD | ST Microelectronics |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product M36DR432AD M36DR432BD
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product
FEATURES SUMMARY s Multiple Memory Product – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM s SUPPLY VOLTAGE – VDDF = VDD |
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M36DR432AZA | ST Microelectronics |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product M36DR432A M36DR432B
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY s SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V
s s s
Figure 1. Packages
– VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns LO |
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M36DR432B | ST Microelectronics |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product M36DR432A M36DR432B
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY s SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V
s s s
Figure 1. Packages
– VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns LO |
Последние обновления
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2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
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