| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | M36L0R8060 | 256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM M36L0R8060T0 M36L0R8060B0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 64 Mbit (4Mb x16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VCCP = VDDQ = 1.7 to 1.95V – VP |
 ST Microelectronics |
|
| 2 | M36L0R8060B1 | Multi-Chip Package M36L0R8060T1 M36L0R8060B1 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 64 Mbit (4Mb x16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VCCP = VDDQF = 1.7 to 1.95 |
 STMicroelectronics |
|
| 1 | M36L0R8060T1 | Multi-Chip Package M36L0R8060T1 M36L0R8060B1 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 64 Mbit (4Mb x16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VCCP = VDDQF = 1.7 to 1.95 |
STMicroelectronics |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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