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M48T35Y даташитФункция этой детали – «256 Kbit (32 Kb X 8) Timekeeper Sram». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M48T35Y | ST Microelectronics |
256 Kbit (32 Kb x 8) TIMEKEEPER SRAM M48T35 M48T35Y
5 V, 256 Kbit (32 Kb x 8) TIMEKEEPER® SRAM
Features
■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery
■ BYTEWIDE™ RAM-like clock access
■ BCD coded year, month, day, date, hours, minutes, and seconds
■ Frequency test output for real-time clock
■ Automatic power-fail chip deselect and WRITE protection
■ WRITE protect voltages VPFD = power-fail deselect voltage): – M48T35: VCC = 4.75 to 5.5 V; 4.5 V ≤ VPFD ≤ 4.75 V – M48T35Y: VCC = 4.5 to 5.5 |
Это результат поиска, начинающийся с "48T35Y", "M48T" |
Номер в каталоге | Производители | Описание | |
2SC4835 | Panasonic Semiconductor |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) Transistor
2SC4835
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
2.1±0.1
s Features
q q q q
0.425
1.25±0.1
0.425
Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and a |
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4835 | Tuofeng Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V
RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V
• Super High Density Cell Design • Reliable and Rugged • SO-8 Packag |
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4835P | Anachip Corporation |
AF4835P AF4835P
P-Channel Enhancement Mode Power MOSFET Features
- Simple Drive Requirement - Low On-resistance - Fast Switching
General Description
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resist |
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AF4835P | ETC |
P-Channel Enhancement Mode Power MOSFET AF4835P
P-Channel Enhancement Mode Power MOSFET Features
- Simple Drive Requirement - Low On-resistance - Fast Switching
General Description
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resist |
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AF4835PS | ETC |
P-Channel Enhancement Mode Power MOSFET AF4835P
P-Channel Enhancement Mode Power MOSFET Features
- Simple Drive Requirement - Low On-resistance - Fast Switching
General Description
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resist |
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AF4835PSA | ETC |
P-Channel Enhancement Mode Power MOSFET |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |