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M48Z128V даташит

Функция этой детали – «5.0v Or 3.3v / 1 Mbit (128 Kbit».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
M48Z128V ST Microelectronics
ST Microelectronics
  5.0V OR 3.3V / 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM FEATURES SUMMARY s INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY s Figure 1. 32-pin PMDIP Module CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE ABSENCE OF POWER BATTERY INTERNALLY ISOLATED UNTIL POWER IS FIRST APPLIED AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES: (VPFD = Power-fail Deselect Voltage) – M48Z128: VCC = 4.75 to 5.5V 4.5V �
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Это результат поиска, начинающийся с "48Z128V", "M48Z1"

Номер в каталоге Производители Описание PDF
M48Z12 ST Microelectronics
ST Microelectronics

16 Kbit (2 Kb x 8) ZEROPOWER SRAM

M48Z02 M48Z12 5 V, 16 Kbit (2 Kb x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect
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M48Z128 ST Microelectronics
ST Microelectronics

1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

M48Z128 M48Z128Y 5.0 V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in
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M48Z128Y ST Microelectronics
ST Microelectronics

1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

M48Z128 M48Z128Y 5.0 V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in
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M48Z129V ST Microelectronics
ST Microelectronics

1 Mbit (128 Kb x 8) ZEROPOWER SRAM

M48Z129V 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in the absenc
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M48Z129Y ST Microelectronics
ST Microelectronics

3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM

M48Z129Y M48Z129V 3.3V/5V 1 Mbit (128Kb x8) ZEROPOWER® SRAM s INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION MICROPROCESSOR POWER-ON RESET (RESET VALID EVEN DURING BATTERY BACK-UP MODE) BATTERY LO
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M48Z18 ST Microelectronics
ST Microelectronics

64 Kbit (8 Kb x 8) ZEROPOWER SRAM

M48Z08 M48Z18 5 V, 64 Kbit (8 Kb x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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