|
M48Z129V даташитФункция этой детали – «1 Mbit (128 Kb X 8) Zeropower Sram». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M48Z129V | ST Microelectronics |
1 Mbit (128 Kb x 8) ZEROPOWER SRAM M48Z129V
3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER® SRAM
Not recommended for new design
Features
■ Integrated, ultra low power SRAM, power-fail
control circuit, and battery
■ Conventional SRAM operation; unlimited
)WRITE cycles t(s■ 10 years of data retention in the absence of cpower du■ Microprocessor power-on reset (reset valid roeven during battery backup mode) P■ Battery low pin - provides warning of battery
end-of-life
lete■ Automatic power-fail chip deselect and WRITE protection
so■ WRITE protect vo |
Это результат поиска, начинающийся с "48Z129V", "M48Z1" |
Номер в каталоге | Производители | Описание | |
M48Z12 | ST Microelectronics |
16 Kbit (2 Kb x 8) ZEROPOWER SRAM M48Z02 M48Z12
5 V, 16 Kbit (2 Kb x 8) ZEROPOWER® SRAM
Features
■ Integrated, ultra low power SRAM and powerfail control circuit
■ Unlimited WRITE cycles
■ READ cycle time equals WRITE cycle time
■ Automatic power-fail chip deselect and WRITE protection
■ WRITE protect |
|
M48Z128 | ST Microelectronics |
1 Mbit (128 Kbit x 8) ZEROPOWER SRAM M48Z128 M48Z128Y
5.0 V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
Not recommended for new design
Features
■ Integrated, ultra low power SRAM, power-fail
control circuit, and battery
■ Conventional SRAM operation; unlimited
)WRITE cycles t(s■ 10 years of data retention in |
|
M48Z128V | ST Microelectronics |
5.0V OR 3.3V / 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM M48Z128 M48Z128Y, M48Z128V*
5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
FEATURES SUMMARY s INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY
s
Figure 1. 32-pin PMDIP Module
CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RET |
|
M48Z128Y | ST Microelectronics |
1 Mbit (128 Kbit x 8) ZEROPOWER SRAM M48Z128 M48Z128Y
5.0 V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
Not recommended for new design
Features
■ Integrated, ultra low power SRAM, power-fail
control circuit, and battery
■ Conventional SRAM operation; unlimited
)WRITE cycles t(s■ 10 years of data retention in |
|
M48Z129Y | ST Microelectronics |
3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM M48Z129Y M48Z129V
3.3V/5V 1 Mbit (128Kb x8) ZEROPOWER® SRAM
s
INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION MICROPROCESSOR POWER-ON RESET (RESET VALID EVEN DURING BATTERY BACK-UP MODE) BATTERY LO |
|
M48Z18 | ST Microelectronics |
64 Kbit (8 Kb x 8) ZEROPOWER SRAM M48Z08 M48Z18
5 V, 64 Kbit (8 Kb x 8) ZEROPOWER® SRAM
Features
■ Integrated, ultra low power SRAM and powerfail control circuit
■ Unlimited WRITE cycles
■ READ cycle time equals WRITE cycle time
■ Automatic power-fail chip deselect and WRITE protection
■ WRITE protect |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |