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M58BW016BTZA даташит

Функция этой детали – «16 Mbit 512kb X32 / Boot Block /».



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Номер в каталоге Производители Описание PDF
M58BW016BTZA ST Microelectronics
ST Microelectronics
  16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Packages HIGH PERFORMANCE – Access Time: 80, 90 and 100ns – 56MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – Asynchronous Page Reads PQFP80 (T) s HARDWARE BLOCK PROTECTION – WP pin Lock Pr
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Это результат поиска, начинающийся с "58BW016BTZA", "M58BW016B"

Номер в каталоге Производители Описание PDF
M58BW016BB ST Microelectronics
ST Microelectronics

16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o
pdf
M58BW016BB100T3T ST Microelectronics
ST Microelectronics

16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o
pdf
M58BW016BB100T6T ST Microelectronics
ST Microelectronics

16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o
pdf
M58BW016BB100ZA3T ST Microelectronics
ST Microelectronics

16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o
pdf
M58BW016BB100ZA6T ST Microelectronics
ST Microelectronics

16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o
pdf
M58BW016BB80T3T ST Microelectronics
ST Microelectronics

16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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