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M58BW016DBZA даташитФункция этой детали – «16 Mbit 512kb X32 / Boot Block /». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M58BW016DBZA | ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)
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Figure 1. Packages
HIGH PERFORMANCE – Access Time: 80, 90 and 100ns – 56MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – Asynchronous Page Reads
PQFP80 (T)
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HARDWARE BLOCK PROTECTION – WP pin Lock Pr |
Это результат поиска, начинающийся с "58BW016DBZA", "M58BW016D" |
Номер в каталоге | Производители | Описание | |
M58BW016DB | ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o |
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M58BW016DB100T3T | ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o |
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M58BW016DB100T6T | ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o |
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M58BW016DB100ZA3T | ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o |
|
M58BW016DB100ZA6T | ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o |
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M58BW016DB80T3T | ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (o |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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