|
M58BW032DT даташитФункция этой детали – «32 Mbit 3.3v Supply Flash Memory». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M58BW032DT | STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB
32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
■
■
■
SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PERFORMANCE – Access Time: 45, 55 and 60ns – 75MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – Asynchronous Page Reads MEMORY ORGANIZATION – Eight 64 Kbit small parameter Blocks – Four 128Kbit large parameter Block |
Это результат поиска, начинающийся с "58BW032DT", "M58BW03" |
Номер в каталоге | Производители | Описание | |
DAT58032 | DAICO Industries |
GaAs 5 Section Attenuator MODEL NUMBER DAT58032
FEATURES • DC - 500 MHz • 1 dB LSB, 31 dB Range • 100 nSec Switching Speed • 9 mA, +5 VDC
GaAs 5 Section Attenuator
• 14 mA, -12 VDC • 24 Pin Flatpack • See DA0953 for 24 Pin DIP
5 BIT
DAICO
Industries
310.507.3242 � |
|
M58BW032BB | STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB
32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
■
■
■
SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PE |
|
M58BW032BT | STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB
32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
■
■
■
SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PE |
|
M58BW032DB | STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB
32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
■
■
■
SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PE |
|
SY58032U | Micrel Semiconductor |
ULTRRA-PRECISION 1:8 FANOUT BUFFER
Micrel, Inc.
ULTRA-PRECISION 1:8 FANOUT BUFFER WITH LVPECL OUTPUTS AND INTERNAL TERMINATION
Precision Edge SY58032U
Precision Edge® SY58032U ®
FEATURES
s Precision 1:8, LVPECL fanout buffer s Guaranteed AC performance over temperature and voltage: • C |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |