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M58CR032DZB даташитФункция этой детали – «32 Mbit 2mb X 16 / Dual Bank». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M58CR032DZB | ST Microelectronics |
32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR032C M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers
s
Figure 1. Packages
– VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 54MHz – Page mode Read (4 Words Page) – Random Access: 85, 100, 120 ns
FBGA
s
PROGRAMMING TIME – 10µs by Word typical – Double/Quadruple Word programming option
TFBGA56 ( |
Это результат поиска, начинающийся с "58CR032DZB", "M58CR032" |
Номер в каталоге | Производители | Описание | |
DAT58032 | DAICO Industries |
GaAs 5 Section Attenuator MODEL NUMBER DAT58032
FEATURES • DC - 500 MHz • 1 dB LSB, 31 dB Range • 100 nSec Switching Speed • 9 mA, +5 VDC
GaAs 5 Section Attenuator
• 14 mA, -12 VDC • 24 Pin Flatpack • See DA0953 for 24 Pin DIP
5 BIT
DAICO
Industries
310.507.3242 � |
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M58CR032C | ST Microelectronics |
32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR032C M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers
s
Figure 1. Packages
– VPP = 12V for fast Program |
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M58CR032C100ZB6T | ST Microelectronics |
32 Mbit (2Mb x 16 / Dual Bank / Burst ) 1.8V Supply Flash Memory M58CR032C M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers
s
Figure 1. Packages
– VPP = 12V for fast Program |
|
M58CR032C120ZB6T | ST Microelectronics |
32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR032C M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers
s
Figure 1. Packages
– VPP = 12V for fast Program |
|
M58CR032C85ZB6T | ST Microelectronics |
32 Mbit (2Mb x 16 / Dual Bank / Burst ) 1.8V Supply Flash Memory M58CR032C M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers
s
Figure 1. Packages
– VPP = 12V for fast Program |
|
M58CR032CZB | ST Microelectronics |
32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR032C M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers
s
Figure 1. Packages
– VPP = 12V for fast Program |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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