DataSheet26.com


M58CR032DZB даташит

Функция этой детали – «32 Mbit 2mb X 16 / Dual Bank».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
M58CR032DZB ST Microelectronics
ST Microelectronics
  32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR032C M58CR032D 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers s Figure 1. Packages – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 54MHz – Page mode Read (4 Words Page) – Random Access: 85, 100, 120 ns FBGA s PROGRAMMING TIME – 10µs by Word typical – Double/Quadruple Word programming option TFBGA56 (
pdf

Это результат поиска, начинающийся с "58CR032DZB", "M58CR032"

Номер в каталоге Производители Описание PDF
DAT58032 DAICO Industries
DAICO Industries

GaAs 5 Section Attenuator

MODEL NUMBER DAT58032 FEATURES • DC - 500 MHz • 1 dB LSB, 31 dB Range • 100 nSec Switching Speed • 9 mA, +5 VDC GaAs 5 Section Attenuator • 14 mA, -12 VDC • 24 Pin Flatpack • See DA0953 for 24 Pin DIP 5 BIT DAICO Industries 310.507.3242 �
pdf
M58CR032C ST Microelectronics
ST Microelectronics

32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR032C M58CR032D 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers s Figure 1. Packages – VPP = 12V for fast Program
pdf
M58CR032C100ZB6T ST Microelectronics
ST Microelectronics

32 Mbit (2Mb x 16 / Dual Bank / Burst ) 1.8V Supply Flash Memory

M58CR032C M58CR032D 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers s Figure 1. Packages – VPP = 12V for fast Program
pdf
M58CR032C120ZB6T ST Microelectronics
ST Microelectronics

32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR032C M58CR032D 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers s Figure 1. Packages – VPP = 12V for fast Program
pdf
M58CR032C85ZB6T ST Microelectronics
ST Microelectronics

32 Mbit (2Mb x 16 / Dual Bank / Burst ) 1.8V Supply Flash Memory

M58CR032C M58CR032D 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers s Figure 1. Packages – VPP = 12V for fast Program
pdf
M58CR032CZB ST Microelectronics
ST Microelectronics

32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR032C M58CR032D 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers s Figure 1. Packages – VPP = 12V for fast Program
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты