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M58LR128GL даташитФункция этой детали – «128 And 256mbit 1.8v Supply Flash Memories». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M58LR128GL | STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories
M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL
128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories
Feature summary
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Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 66MHz – Random Access: 85ns (M58LR128GU/L) 90ns (M58LR256GU/L) Synchronous Burst Read Suspend Programming time – 1 |
Это результат поиска, начинающийся с "58LR128GL", "M58LR12" |
Номер в каталоге | Производители | Описание | |
HM658128A | Hitachi |
131072-word x 8-bit High Speed CMOS Pseudo Static RAM ADE-203-188H(Z)
HM658128A Series
131072-word × 8-bit High Speed CMOS Pseudo Static RAM
Rev. 8.0 Jun. 5, 1995
The Hitachi HM658128A is a pseudo-static RAM organized as 131,072-word × 8-bit. HM658128A realizes low power consumption and high speed access time |
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M58LR128FB | ST Microelectronics |
Flash Memory
M58LR128FT M58LR128FB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ |
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M58LR128FT | ST Microelectronics |
Flash Memory
M58LR128FT M58LR128FB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ |
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M58LR128GB | STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
M58LR128GT M58LR128GB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for |
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M58LR128GT | STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
M58LR128GT M58LR128GB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for |
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M58LR128GU | STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories
M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL
128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories
Feature summary
■
Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O B |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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