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M58LR128GL даташит

Функция этой детали – «128 And 256mbit 1.8v Supply Flash Memories».



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Номер в каталоге Производители Описание PDF
M58LR128GL STMicroelectronics
STMicroelectronics
  128 and 256Mbit 1.8V supply Flash memories

M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories Feature summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 66MHz – Random Access: 85ns (M58LR128GU/L) 90ns (M58LR256GU/L) Synchronous Burst Read Suspend Programming time – 1
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Это результат поиска, начинающийся с "58LR128GL", "M58LR12"

Номер в каталоге Производители Описание PDF
HM658128A Hitachi
Hitachi

131072-word x 8-bit High Speed CMOS Pseudo Static RAM

ADE-203-188H(Z) HM658128A Series 131072-word × 8-bit High Speed CMOS Pseudo Static RAM Rev. 8.0 Jun. 5, 1995 The Hitachi HM658128A is a pseudo-static RAM organized as 131,072-word × 8-bit. HM658128A realizes low power consumption and high speed access time
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M58LR128FB ST Microelectronics
ST Microelectronics

Flash Memory

M58LR128FT M58LR128FB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ
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M58LR128FT ST Microelectronics
ST Microelectronics

Flash Memory

M58LR128FT M58LR128FB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ
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M58LR128GB STMicroelectronics
STMicroelectronics

128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory

M58LR128GT M58LR128GB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for
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M58LR128GT STMicroelectronics
STMicroelectronics

128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory

M58LR128GT M58LR128GB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for
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M58LR128GU STMicroelectronics
STMicroelectronics

128 and 256Mbit 1.8V supply Flash memories

M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories Feature summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O B
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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