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M58LR128KB даташитФункция этой детали – «(m58lrxxxkx) 128 Or 256 Mbit 1.8 V Supply». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M58LR128KB | Numonyx |
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories M58LR128KT M58LR128KB M58LR256KT M58LR256KB
128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
Preliminary Data
Features
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Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 54 MHz, 66 MHz – Asynchronous page read mode – Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time – 2.5 µs typical wor |
Это результат поиска, начинающийся с "58LR128KB", "M58LR12" |
Номер в каталоге | Производители | Описание | |
HM658128A | Hitachi |
131072-word x 8-bit High Speed CMOS Pseudo Static RAM ADE-203-188H(Z)
HM658128A Series
131072-word × 8-bit High Speed CMOS Pseudo Static RAM
Rev. 8.0 Jun. 5, 1995
The Hitachi HM658128A is a pseudo-static RAM organized as 131,072-word × 8-bit. HM658128A realizes low power consumption and high speed access time |
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M58LR128FB | ST Microelectronics |
Flash Memory
M58LR128FT M58LR128FB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ |
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M58LR128FT | ST Microelectronics |
Flash Memory
M58LR128FT M58LR128FB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ |
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M58LR128GB | STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
M58LR128GT M58LR128GB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for |
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M58LR128GL | STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories
M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL
128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories
Feature summary
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Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O B |
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M58LR128GT | STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
M58LR128GT M58LR128GB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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