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M58LW032C даташит

Функция этой детали – «32 Mbit 2mb X16 / Uniform Block /».



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Номер в каталоге Производители Описание PDF
M58LW032C ST Microelectronics
ST Microelectronics
  32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory

M58LW032C 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ – Synchronous Burst read – Asynchronous Random Read – Asynchronous Address Latch Controlled Read – Page Read TSOP56 (N) 14 x 20 mm s ACCESS TIME – Synchronous Burst Read up to 56MHz – Asynchr
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Это результат поиска, начинающийся с "58LW032C", "M58LW0"

Номер в каталоге Производители Описание PDF
DAT58032 DAICO Industries
DAICO Industries

GaAs 5 Section Attenuator

MODEL NUMBER DAT58032 FEATURES • DC - 500 MHz • 1 dB LSB, 31 dB Range • 100 nSec Switching Speed • 9 mA, +5 VDC GaAs 5 Section Attenuator • 14 mA, -12 VDC • 24 Pin Flatpack • See DA0953 for 24 Pin DIP 5 BIT DAICO Industries 310.507.3242 �
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M58LW032 ST Microelectronics
ST Microelectronics

32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory

M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8V to VDD for I
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M58LW032A ST Microelectronics
ST Microelectronics

32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory

M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8V to VDD for I
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M58LW032A110N1T ST Microelectronics
ST Microelectronics

32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory

M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8V to VDD for I
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M58LW032A110N6T ST Microelectronics
ST Microelectronics

32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory

M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8V to VDD for I
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M58LW032A110ZA1T ST Microelectronics
ST Microelectronics

32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory

M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8V to VDD for I
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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