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M58LW032C даташитФункция этой детали – «32 Mbit 2mb X16 / Uniform Block /». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M58LW032C | ST Microelectronics |
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory M58LW032C
32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
s
– VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ – Synchronous Burst read – Asynchronous Random Read – Asynchronous Address Latch Controlled Read – Page Read
TSOP56 (N) 14 x 20 mm
s
ACCESS TIME – Synchronous Burst Read up to 56MHz – Asynchr |
Это результат поиска, начинающийся с "58LW032C", "M58LW0" |
Номер в каталоге | Производители | Описание | |
DAT58032 | DAICO Industries |
GaAs 5 Section Attenuator MODEL NUMBER DAT58032
FEATURES • DC - 500 MHz • 1 dB LSB, 31 dB Range • 100 nSec Switching Speed • 9 mA, +5 VDC
GaAs 5 Section Attenuator
• 14 mA, -12 VDC • 24 Pin Flatpack • See DA0953 for 24 Pin DIP
5 BIT
DAICO
Industries
310.507.3242 � |
|
M58LW032 | ST Microelectronics |
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory M58LW032A
32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
s
– VDDQ = 1.8V to VDD for I |
|
M58LW032A | ST Microelectronics |
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory M58LW032A
32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
s
– VDDQ = 1.8V to VDD for I |
|
M58LW032A110N1T | ST Microelectronics |
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory M58LW032A
32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
s
– VDDQ = 1.8V to VDD for I |
|
M58LW032A110N6T | ST Microelectronics |
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory M58LW032A
32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
s
– VDDQ = 1.8V to VDD for I |
|
M58LW032A110ZA1T | ST Microelectronics |
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory M58LW032A
32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
s
– VDDQ = 1.8V to VDD for I |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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