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M5M51016BRT-12VL даташит

Функция этой детали – «1048576-bit(65536-word By 16-bit)cmos StatIC Ram».



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Номер в каталоге Производители Описание PDF
M5M51016BRT-12VL Mitsubishi
Mitsubishi
  1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

M5M51016BTP,RT-12VL, -12VLL 1048576-BIT(65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT)CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application. The M5M51
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M5M51016BRT-12VL-I Mitsubishi
Mitsubishi
  1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

9 9 Jul Jul,1997 ,1997 M5M51016BTP,RT-12VL-I, M5M51016BTP,RT-12VL-I, -12VLL-I -12VLL-I 1048576-BIT(65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT)CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation curr
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M5M51016BRT-12VL-I Mitsubishi
Mitsubishi
  1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

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M5M51016BRT-12VLL Mitsubishi
Mitsubishi
  1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

M5M51016BTP,RT-12VL, -12VLL 1048576-BIT(65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT)CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application. The M5M51
pdf
M5M51016BRT-12VLL-I Mitsubishi
Mitsubishi
  1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

9 9 Jul Jul,1997 ,1997 M5M51016BTP,RT-12VL-I, M5M51016BTP,RT-12VL-I, -12VLL-I -12VLL-I 1048576-BIT(65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT)CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation curr
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M5M51016BRT-12VLL-I Mitsubishi
Mitsubishi
  1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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