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M5M51R16AWG-10L даташитФункция этой детали – «1048576-bit(65536-word By 16-bit)cmos StatIC Ram». |
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Номер в каталоге | Производители | Описание | |
M5M51R16AWG-10L | Mitsubishi |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM MITSUBISHI LSIs
M5M51R16AWG -10L, -12L, -15L, -10H, -12H, -15H
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current and low operation current and ideal for the battery back-up application. The M5M51R16AWG is packaged in a 48-pin ch |
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M5M51R16AWG-10LI | Mitsubishi |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM MITSUBISHI LSIs
M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current and low operation current and ideal for the battery back-up application. The M5M51R16AWG is packaged in a 48- |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |