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M5M5256FP даташит

Функция этой детали – «262144-bit (32768-word By 8-bit) Cmos StatIC Ram».



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Номер в каталоге Производители Описание PDF
M5M5256FP Mitsubishi Electric
Mitsubishi Electric
  (M5M5256xP) CMOS Sraric RAM

( DataSheet : )
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M5M5256FP Mitsubishi
Mitsubishi
  262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

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M5M5256FP-45LL Mitsubishi
Mitsubishi
  262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

'97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which r
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M5M5256FP-45LL-I Mitsubishi
Mitsubishi
  262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memo
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M5M5256FP-45LL-W Mitsubishi
Mitsubishi
  262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-W,-55LL-W,-70LL-W, -45XL-W,-55XL-W,-70XL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memo
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M5M5256FP-45XL Mitsubishi
Mitsubishi
  262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

'97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which r
pdf
M5M5256FP-45XL-I Mitsubishi
Mitsubishi
  262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memo
pdf
M5M5256FP-45XL-W Mitsubishi
Mitsubishi
  262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-W,-55LL-W,-70LL-W, -45XL-W,-55XL-W,-70XL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memo
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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