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M5M5V208FP-70L даташитФункция этой детали – «2097152-bit (262144-word By 8-bit) Cmos StatIC Ram». |
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Номер в каталоге | Производители | Описание | |
M5M5V208FP-70L | Mitsubishi |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM '97.3.21
MITSUBISHI LSIs
M5M5V208FP,VP,RV,KV,KR
-70L , -85L, -10L , -12L, -70LL, -85LL, -10LL, -12LL
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M5M5V208 is designed for memory applications where h |
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M5M5V208FP-70L-W | Mitsubishi |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM '97.3.21
MITSUBISHI LSIs
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W , -70LL-W, -85LL-W, -10LL-W, -12LL-W
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M5M5V208 is designed for memory ap |
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M5M5V208FP-70LL | Mitsubishi |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM '97.3.21
MITSUBISHI LSIs
M5M5V208FP,VP,RV,KV,KR
-70L , -85L, -10L , -12L, -70LL, -85LL, -10LL, -12LL
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M5M5V208 is designed for memory applications where h |
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M5M5V208FP-70LL-W | Mitsubishi |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM '97.3.21
MITSUBISHI LSIs
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W , -70LL-W, -85LL-W, -10LL-W, -12LL-W
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M5M5V208 is designed for memory ap |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |