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M5M5V416CWG-55HI даташитФункция этой детали – «Cmos StatIC Ram». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M5M5V416CWG-55HI | Renesas Technology |
CMOS STATIC RAM
RENESAS LSIs 2003.08.21 Ver. 7.0
M5M5V416CWG -55HI, -70HI
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's high-perf ormance 0.18µm CMOS technology . The M5M5V416C is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5V416CWG is packaged in a CSP (chip scale package), |
Это результат поиска, начинающийся с "5M5V416CWG", "M5M5V416CWG-5" |
Номер в каталоге | Производители | Описание | |
M5M5V416CWG-70HI | Mitsubishi |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 2003.08.21 Ver. 7.0
RENESAS LSIs
M5M5V416CWG -55HI, -70HI
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
FEATURES
The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs - Single 2.7~3.6V power supply
organized as 262144-words b |
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TC554161AFTI | Toshiba Semiconductor |
STATIC RAM TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's |
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TC554161AFTI-10 | Toshiba Semiconductor |
STATIC RAM TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's |
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TC554161AFTI-10L | Toshiba Semiconductor |
STATIC RAM TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's |
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TC554161AFTI-70 | Toshiba Semiconductor |
STATIC RAM TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's |
|
TC554161AFTI-70L | Toshiba Semiconductor |
STATIC RAM TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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