| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | M68731N | SILICON MOS FET POWER AMPLIFIER / 142-163MHz / 7W / FM PORTABLE RADIO MITSUBISHI RF POWER MODULE M68731N SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS |
 Mitsubishi |
|
0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to M68731N |
| Part No | Description ( Function) | Manufacturers | |
| M68731H | SILICON MOS FET POWER AMPLIFIER / 150-175MHz / 7W / FM PORTABLE RADIO MITSUBISHI RF POWER MODULE M68731H SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG |
Mitsubishi |
|
| M68731HM | SILICON MOS FET POWER AMPLIFIER / 145-174MHz / 6.5W / FM PORTABLE RADIO MITSUBISHI RF POWER MODULE M68731HM SILICON MOS FET POWER AMPLIFIER, 145-174MHz, 6.5W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 2-R1.5±0.1 Dimensions in mm BLOCK DIAGRAM 2 3 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 V |
Mitsubishi |
|
| M68731L | SILICON MOS FET POWER AMPLIFIER / 135-155MHz / 7W / FM PORTABLE RADIO MITSUBISHI RF POWER MODULE M68731L SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG |
Mitsubishi |
|
| 68731-xxxH | (687xx-xxxH) Straight 1-Row BergStik II Headers w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
 Framatome Connectors International |
|
| M68732 | SILICON MOS FET POWER AMPLIFIER / 520-530MHz / 6.5W / FM PORTABLE RADIO MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 |
Mitsubishi |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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