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M68Z128-55N1 даташитФункция этой детали – «5v / 1 Mbit 128kb X8 Low Power». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M68Z128-55N1 | ST Microelectronics |
5V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable M68Z128
5V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
s
ULTRA LOW DATA RETENTION CURRENT – 10nA (typical) – 2.0µA (max)
s s
OPERATION VOLTAGE: 5V ±10% 128Kb x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O LOW ACTIVE and STANDBY POWER AUTOMATIC POWER-DOWN WHEN DESELECTED INTENDED FOR USE WITH ST ZEROPOWER® AND TIMEKEEPER ® CONTROLLERS Figure 1. Logic Diagram
TSOP32 (N) 8 x 20mm
s s s s s
s
DESCRIPTION The M68Z128 is a 1 Mbit |
Это результат поиска, начинающийся с "68Z128", "M68Z128-5" |
Номер в каталоге | Производители | Описание | |
M68Z128 | ST Microelectronics |
5V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable M68Z128
5V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
s
ULTRA LOW DATA RETENTION CURRENT – 10nA (typical) – 2.0µA (max)
s s
OPERATION VOLTAGE: 5V ±10% 128Kb x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW VCC DATA RETENTION: 2V TRI- |
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M68Z128N | ST Microelectronics |
5V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable M68Z128
5V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
s
ULTRA LOW DATA RETENTION CURRENT – 10nA (typical) – 2.0µA (max)
s s
OPERATION VOLTAGE: 5V ±10% 128Kb x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW VCC DATA RETENTION: 2V TRI- |
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M68Z128W | ST Microelectronics |
3V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable M68Z128W
3V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
s s
LOW VOLTAGE: 3.0V (+0.6V / –0.3V) 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 1.4V TRI-STATE COMMON I/O LOW ACTIVE and STANDBY POWER INTENDED for USE |
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M68Z128W-70N1T | ST Microelectronics |
3V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable M68Z128W
3V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
s s
LOW VOLTAGE: 3.0V (+0.6V / –0.3V) 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 1.4V TRI-STATE COMMON I/O LOW ACTIVE and STANDBY POWER INTENDED for USE |
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M68Z128WN | ST Microelectronics |
3V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable M68Z128W
3V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
s s
LOW VOLTAGE: 3.0V (+0.6V / –0.3V) 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 1.4V TRI-STATE COMMON I/O LOW ACTIVE and STANDBY POWER INTENDED for USE |
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AK68128D1C | ACCUTEK |
131072 x 8 Bit CMOS Static Random Access Memory MICROCIRCUIT CORPORATION
DESCRIPTION
The Accutek AK68128D1C high density memory module is a static random access memory organized in 128K x 8 bit words. The assembly consists of one medium speed 128K x 8 SRAM in a TSOP Type 1 package. The module is supplied in a 600 mil wide, 32 |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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