DataSheet26.com


MA27 даташит

Функция этой детали – «Diode ( Rectifier )».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
MA27 American Microsemiconductor
American Microsemiconductor
  Diode ( Rectifier )

pdf
MA27111 Panasonic
Panasonic
  Silicon epitaxial planar type

Switching Diodes MA27111 Silicon epitaxial planar type Unit: mm For high-speed switching circuits ■ Features • High-density mounting is possible • Short reverse recovery time trr • Small terminal capacitance Ct 0.27+0.05 –0.02 2 1.00±0.05 1.40±0.05 0.13+0.05 –0.02 1 0.60±0.05 0.15 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature
pdf
MA27D27 Panasonic Semiconductor
Panasonic Semiconductor
  Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA27D27 Silicon epitaxial planar type For super high speed switching 0.60±0.05 Unit: mm 0.20±0.05 0.12+0.05 –0.02 ■ Features • Small reverse current IR • Optimum for high frequency rectification because of its short reverse recovery time trr • SSS-Mini type 2-pin package 1 1.00±0.05 1.40±0.05 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surg
pdf
MA27D29 Panasonic Semiconductor
Panasonic Semiconductor
  Schottky Barrier Diodes

Schottky Barrier Diodes (SBD) MA27D29 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • Low forward voltage: VF < 0.42 V (at IF = 100 mA) • Optimum for high frequency rectification because of its short reverse recovery time trr . 0.27+0.05 –0.02 1 1.00±0.05 1.40±0.05 0.12+0.05 –0.02 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current *
pdf
MA27D30 Panasonic Semiconductor
Panasonic Semiconductor
  Schottky Barrier Diodes

Schottky Barrier Diodes (SBD) MA27D30 Silicon epitaxial planar type Unit: mm For super high speed switching 0.27+0.05 –0.02 0.12+0.05 –0.02 ■ Features • Small reverse current: IR < 2 µA (at VR = 30 V) • Optimum for high frequency rectification because of its short reverse recovery time trr . 1 1.00±0.05 1.40±0.05 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current *
pdf
MA27Q American Microsemiconductor
American Microsemiconductor
  Diode ( Rectifier )

pdf
MA27T American Microsemiconductor
American Microsemiconductor
  Diode ( Rectifier )

pdf
MA27V01 Panasonic Semiconductor
Panasonic Semiconductor
  Silicon epitaxial planar type

Variable Capacitance Diodes MA27V01 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27+0.05 –0.02 2 0.10+0.05 –0.02 1.00±0.05 1.40±0.05 1 0.60±0.05 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbo
pdf

[1]   [2]   [3]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты