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MA27 даташитФункция этой детали – «Diode ( Rectifier )». |
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Номер в каталоге | Производители | Описание | |
MA27 | American Microsemiconductor |
Diode ( Rectifier ) |
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MA27111 | Panasonic |
Silicon epitaxial planar type Switching Diodes
MA27111
Silicon epitaxial planar type
Unit: mm
For high-speed switching circuits ■ Features
• High-density mounting is possible • Short reverse recovery time trr • Small terminal capacitance Ct
0.27+0.05 –0.02 2 1.00±0.05 1.40±0.05
0.13+0.05 –0.02
1 0.60±0.05 0.15 min.
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature |
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MA27D27 | Panasonic Semiconductor |
Silicon epitaxial planar type Schottky Barrier Diodes (SBD)
MA27D27
Silicon epitaxial planar type
For super high speed switching
0.60±0.05
Unit: mm
0.20±0.05
0.12+0.05 –0.02
■ Features
• Small reverse current IR • Optimum for high frequency rectification because of its short reverse recovery time trr • SSS-Mini type 2-pin package
1
1.00±0.05
1.40±0.05
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surg |
|
MA27D29 | Panasonic Semiconductor |
Schottky Barrier Diodes Schottky Barrier Diodes (SBD)
MA27D29
Silicon epitaxial planar type
Unit: mm
For super high speed switching ■ Features
• Low forward voltage: VF < 0.42 V (at IF = 100 mA) • Optimum for high frequency rectification because of its short reverse recovery time trr .
0.27+0.05 –0.02 1 1.00±0.05 1.40±0.05
0.12+0.05 –0.02
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
* |
|
MA27D30 | Panasonic Semiconductor |
Schottky Barrier Diodes Schottky Barrier Diodes (SBD)
MA27D30
Silicon epitaxial planar type
Unit: mm
For super high speed switching
0.27+0.05 –0.02 0.12+0.05 –0.02
■ Features
• Small reverse current: IR < 2 µA (at VR = 30 V) • Optimum for high frequency rectification because of its short reverse recovery time trr .
1 1.00±0.05 1.40±0.05
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
*
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MA27Q | American Microsemiconductor |
Diode ( Rectifier ) |
|
MA27T | American Microsemiconductor |
Diode ( Rectifier ) |
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MA27V01 | Panasonic Semiconductor |
Silicon epitaxial planar type
Variable Capacitance Diodes
MA27V01
Silicon epitaxial planar type
Unit: mm
For VCO ■ Features
• Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27+0.05 –0.02 2
0.10+0.05 –0.02
1.00±0.05
1.40±0.05
1 0.60±0.05 5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Junction temperature Storage temperature Symbo |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |