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MA27V07 даташитФункция этой детали – «SilICon Epitaxial Planar Type». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MA27V07 | Panasonic Semiconductor |
Silicon epitaxial planar type
Variable Capacitance Diodes
MA27V07
Silicon epitaxial planar type
Unit: mm
For VCO s Features
• Good linearity and large capacitance-ratio in CD − VR relation • High frequency type by this low capacitance • SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27+0.05 –0.02 2
0.10+0.05 –0.02
1.00±0.05
1.40±0.05
1 0.60±0.05 5°
s Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Junction temperature Storage |
Это результат поиска, начинающийся с "27V07", "MA27" |
Номер в каталоге | Производители | Описание | |
2SC2707 | Inchange Semiconductor |
Power Transistor
INCHANGE Semiconductor
isc Product Specification 2SC2707
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min.) ·High Power Dissipation ·Complement to Type 2SA1147
APPLICATIONS ·Designed for power switc |
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2SD2707 | ROHM Semiconductor |
General Purpose Transistor (50V/ 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
General Purpose Transistor (50V, 0.15A)
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at I |
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2SK2707 | Sanken electric |
MOSFET ( Transistor ) 2SK2707
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 600 ± 30 ± 4.5 ± 18 35 (Tc = 25ºC) 50 4.5 150 –55 to +150
(Ta = 25ºC)
External dimensions 1 ...... FM20
Electrical Characteristics
Symbol V(BR) DSS I GSS I DSS A A W mJ A º |
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AON2707 | Alpha & Omega Semiconductors |
30V P-Channel MOSFET AON2707
30V P-Channel MOSFET with Schottky Diode
General Description
The AON2707 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conver |
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CHV2707-QJ | Mimix Broadband |
InGaP HBT 5W Linear Power Amplifier 700 to 800 MHz InGaP HBT 5W Linear Power Amplifier
October 2006 - Rev 25-Oct-06
Features
Internal Pre-matching Single Supply Operation, 12V Power Gain 14 dB ESD Protection On Board Current Control for Multiple Applications 2.5% EVM @ 30 dBm Avg Power, 802.16 OFDM Signal Format, |
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EVQ22707K | Panasonic |
(EVQ Series) 5N Type Light Touch Switches .com5N Type Light Touch Switches t4UType: EVQPA/EVQPB/EVQPF
eeEVQ2/EVQPC ataShBroad product range meets a variety of needs ww.D■ Features w● 6.0 mm҂6.0 mm square, body thickness 3.2 mm
Japan Malaysia China
Light Touch Switches/5N Type
● Travel 0.25 mm (clear click feeli |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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