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MA2C179 даташитФункция этой детали – «SilICon Epitaxial Planar Type». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MA2C179 | Panasonic |
Silicon epitaxial planar type Switching Diodes
MA2C178, MA2C179
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits
φ 0.45 max.
I Absolute Maximum Ratings Ta = 25°C
0.2 max.
Parameter Reverse voltage (DC) Repetitive peak reverse voltage MA2C178 MA2C179 MA2C178 MA2C179
Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg
Rating 40 80 40 80 200 600 1 200 −55 to +200
Unit V
2
V
φ 1.75 max.
Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature N |
Это результат поиска, начинающийся с "2C179", "MA2C" |
Номер в каталоге | Производители | Описание | |
2SA2179 | Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor
Ordering number : ENA0199
2SA2179
2SA2179
Applications
•
PNP Epitaxial Planar Silicon Transistor
50V / 13A High-Speed Switching Applications
High-speed switching applications (switching regulators, drive circuit).
Features
• • • •
Adoption of |
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2SD2179 | Panasonic Semiconductor |
Silicon NPN epitaxial planer type(For low-frequency output amplification) Transistor
2SD2179
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB1446
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q q q
0.65 max.
1.0 1.0
Low collector to emitte |
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2SD2179 | Panasonic Semiconductor |
Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SD2179
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB1446
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q q q
0.65 max.
1.0 1.0
Low collector to emitte |
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2SK2179 | Shindengen Electric Mfg.Co.Ltd |
VX-2 Series Power MOSFET(500V 3A) SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2179
(F3E50VX2)
500V 3A
FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION
•œ S |
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CG2179M2 | CEL |
RF SWITCH RF SWITCH
CG2179M2
L, SE-bnatenrda SMhiodrdt DleocPuomwenetr/TSitlPeDNTamSewHietrceh
DESCRIPTION
The CG2179M2 is a pHEMT GaAs SPDT (Single Pole Double Throw) switch. This device can operate from 0.05 GHz to 3.0GHz, having low insertion loss and high isolation.
PACKAGE
6 |
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CHM2179A | United Monolithic Semiconductors |
W-band Mixer CHM2179a
W-band Mixer
GaAs Monolithic Microwave IC
Description
The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the subs |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |