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MA2C179 даташит

Функция этой детали – «SilICon Epitaxial Planar Type».



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Номер в каталоге Производители Описание PDF
MA2C179 Panasonic
Panasonic
  Silicon epitaxial planar type

Switching Diodes MA2C178, MA2C179 Silicon epitaxial planar type Unit : mm For high-speed switching circuits φ 0.45 max. I Absolute Maximum Ratings Ta = 25°C 0.2 max. Parameter Reverse voltage (DC) Repetitive peak reverse voltage MA2C178 MA2C179 MA2C178 MA2C179 Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 40 80 40 80 200 600 1 200 −55 to +200 Unit V 2 V φ 1.75 max. Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature N
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Это результат поиска, начинающийся с "2C179", "MA2C"

Номер в каталоге Производители Описание PDF
2SA2179 Sanyo Semicon Device
Sanyo Semicon Device

PNP Epitaxial Planar Silicon Transistor

Ordering number : ENA0199 2SA2179 2SA2179 Applications • PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications High-speed switching applications (switching regulators, drive circuit). Features • • • • Adoption of
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2SD2179 Panasonic Semiconductor
Panasonic Semiconductor

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitte
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2SD2179 Panasonic Semiconductor
Panasonic Semiconductor

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitte
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2SK2179 Shindengen Electric Mfg.Co.Ltd
Shindengen Electric Mfg.Co.Ltd

VX-2 Series Power MOSFET(500V 3A)

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2179 (F3E50VX2) 500V 3A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION •œ S
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CG2179M2 CEL
CEL

RF SWITCH

RF SWITCH CG2179M2 L, SE-bnatenrda SMhiodrdt DleocPuomwenetr/TSitlPeDNTamSewHietrceh DESCRIPTION  The CG2179M2 is a pHEMT GaAs SPDT (Single Pole Double Throw) switch. This device can operate from 0.05 GHz to 3.0GHz, having low insertion loss and high isolation. PACKAGE  6
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CHM2179A United Monolithic Semiconductors
United Monolithic Semiconductors

W-band Mixer

CHM2179a W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the subs
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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