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Datasheet MA3S795 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | MA3S795 | Silicon epitaxial planar type Schottky Barrier Diodes (SBD)
MA3S795
Silicon epitaxial planar type
0.28 ± 0.05
For switching circuits I Features
• Extra-small SS-mini type 3-pin package, allowing high-density mounting • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X7 |
Panasonic |
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3 | MA3S795D | Schottky Barrier Diodes (SBD) Schottky Barrier Diodes (SBD)
MA3S795D, MA3S795E (MA795WA, MA795WK)
Silicon epitaxial planar type
0.80±0.05
For switching I Features
• High-density mounting is possible • Low forward voltage VF , optimum for low voltage rectification: VF < 0.3 V (at IF = 1 mA) • Optimum for high frequency r |
Panasonic |
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2 | MA3S795E | Silicon epitaxial planar type Schottky Barrier Diodes (SBD)
MA3S795E
Silicon epitaxial planar type
Unit : mm
0.28 ± 0.05
For switching circuits
1.60 − 0.03 0.80 0.80 0.51 0.51
0.80
1.60 ± 0.1 0.80 ± 0.05
• Extra-small (SS-mini type) package, allowing high-density mounting • Optimum for low voltage rectification bec |
Panasonic |
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1 | MA3S795E | Schottky Barrier Diodes (SBD) Schottky Barrier Diodes (SBD)
MA3S795E
Silicon epitaxial planar type
Unit : mm
0.28 ± 0.05
For switching circuits
1.60 − 0.03 0.80 0.80 0.51 0.51
0.80
1.60 ± 0.1 0.80 ± 0.05
• Extra-small (SS-mini type) package, allowing high-density mounting • Optimum for low voltage rectification bec |
Panasonic |
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Número de pieza | Descripción | Fabricantes | |
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