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MA3X057 даташитФункция этой детали – «SilICon Epitaxial Planar Type». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MA3X057 | Panasonic |
Silicon epitaxial planar type Band Switching Diodes
MA3X057
Silicon epitaxial planar type
2.8 − 0.3
+ 0.2
Unit : mm
0.65 ± 0.15
For band switching I Features
• Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.65 ± 0.15
1.5
+ 0.25 − 0.05
0.95
1.9 ± 0.2
2.9 − 0.05
1 3 2
+ 0.2
0.95
1.45 0 to 0.1
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage |
Это результат поиска, начинающийся с "3X057", "MA3X" |
Номер в каталоге | Производители | Описание | |
2N3057 | Semicoa Semiconductor |
Chip Type 2C3019 Geometry 4500 Polarity PNP Data Sheet No. 2C3019
Chip Type 2C3019 Geometry 4500 Polarity PNP
Generic Packaged Parts: 2N3019, 2N3057
Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices.
Part Numbers:
2N3019, 2N3019S, 2N3019UB, 2N3057, 2N3057A, 2N3700, 2N3700UB, SD3019 |
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2N3057A | Microsemi |
LOW POWER NPN SILICON TRANSISTOR TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Devices 2N3019 2N3019S
2N3057A
2N3700 2N3700S
Qualified Level JAN
JANTX JANTXV
JANS
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Curren |
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2N3057A | Semicoa Semiconductor |
Type 2N3057A Geometry 4500 Polarity NPN Data Sheet No. 2N3057A
Type 2N3057A
Geometry 4500 Polarity NPN Qual Level: JAN - JANS
Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-46 case. Also available in chip form using the 4500 chip geometry. The Min and M |
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2N3057A | MA-COM |
NPN Low Power Silicon Transistor 2N3057A, 2N3700, 2N3700UB
NPN Low Power Silicon Transistor
Features
JANS Qualified to MIL-PRF-19500/391 2N3700 & 2N3700UB available in JANSR
JEDEC registered 2N3700, 2N3057 Lightweight & Low Power Ideal for Space, Military, & other High Reliability
Applications � |
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2SK3057 | NEC |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3057
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3057 PACKAGE Isolated TO-220
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
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AN3057 | Freescale |
Solving Sequential Problems
Freescale Semiconductor Application Note
Document Number: AN3057 Rev. 0, 01/2006
Solving Sequential Problems in Parallel
An SIMD Solution to RSA Cryptography
by Bo Lin Digital Systems Division, NCSG East Kilbride, Scotland
1
Overview
This paper presents |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |