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MA4E1318 даташитФункция этой детали – «(ma4e1317 - Ma4e1319) Gaas Flip Chip Schottky Barrier». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MA4E1318 | Tyco Electronics |
(MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes GaAs Flip Chip Schottky Barrier Diodes
Features
• • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion
MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1
MA4E1317
Description and Applications
M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafer |
Это результат поиска, начинающийся с "4E1318", "MA4E1" |
Номер в каталоге | Производители | Описание | |
MA4E1317 | Tyco Electronics |
(MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes GaAs Flip Chip Schottky Barrier Diodes
Features
• • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion
MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1
MA4E1317 |
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MA4E1319-1 | Tyco Electronics |
(MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes GaAs Flip Chip Schottky Barrier Diodes
Features
• • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion
MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1
MA4E1317 |
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MA4E1319-2 | Tyco Electronics |
(MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes GaAs Flip Chip Schottky Barrier Diodes
Features
• • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion
MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1
MA4E1317 |
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MA4E1338 | Tyco Electronics |
Silicon Medium Barrier Schottky Diodes Also Offering RoHS Compliant Equivalent Parts Silicon Medium Barrier Schottky Diodes
Features
• RF & Microwave Medium Barrier Silicon 8 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package |
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MA4E1339 | Tyco |
Silicon Medium Barrier Schottky Diode Silicon Medium Barrier Schottky Diode
MA4E1339 Series
Features
n n
Case Styles
SOT-23 SOT-143
Medium Barrier Si Schottky Diode Available as Single Diode, Series Tee or Unconnected Pair n Surface Mount Packages n Tape and Reel
Description
The MA4E1339 series is a silicon, med |
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MA4E1339SERIES | Tyco |
Silicon Medium Barrier Schottky Diode Silicon Medium Barrier Schottky Diode
MA4E1339 Series
Features
n n
Case Styles
SOT-23 SOT-143
Medium Barrier Si Schottky Diode Available as Single Diode, Series Tee or Unconnected Pair n Surface Mount Packages n Tape and Reel
Description
The MA4E1339 series is a silicon, med |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |