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Datasheet MA729 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MA729 | Schottky Barrier Diode MA729
Schottky Barrier Diode
SOD-323
Features
For super-high speed switching circuit. For small current rectification. Allowing to rectify under(IF(AV)=200mA) condition. Allowing high-density mounting.
Applications
Schottky epitaxial planar.
Ordering Information
Type No. MA729
Mark | LGE | diode |
2 | MA729 | Schottky Barrier Diode MA729
Schottky Barrier Diode
FEATURES
z For super-high speed switching circuit. z For small current rectification. z Allowing to rectify under(IF(AV)=200mA) condition. z Allowing high-density mounting.
Pb
Lead-free
APPLICATIONS
z Schottky epitaxial planar.
ORDERING INFORMATION
SOD-323
Type No | MDD | diode |
3 | MA729 | Schottky Barrier Diodes (SBD) Schottky Barrier Diodes (SBD)
MA2J729
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification
K A
0.625
0.16 − 0.06
+ 0.1
• Sealed in the S-mini (2-pin) mold and super small type • Allowing to rectify under (IF(AV) = 200 mA) condition | Panasonic | diode |
MA7 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MA700 | Silicon epitaxial planar type Schottky Barrier Diodes (SBD)
MA111
MA700, MA700A
Silicon epitaxial planer type
For ordinary wave detection For super high speed switching
COLORED BAND INDICATES CATHODE
Unit : mm
ø0.45 max. 1 0.2max. 13 min.
s Features
q Low
q Temperature q Extremely q DO-34
coefficient of forward characteri Panasonic data | | |
2 | MA700 | SCHOTTKY BARRIER DIODES www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
MA700, MA700A
PRV : 15 - 30 V Io : 30 mA
FEATURES :
* Low forward voltage VF * Small temperature coefficent of forward characterisble * Small reverse current IR * High-densitty mounting ( 5mm pich insertion) is possible * Pb / RoHS F EIC diode | | |
3 | MA7000 | Silicon planar type Zener Diodes
MAZ7000 Series
Silicon planar type
Unit : mm
For stabilization of power supply
φ 0.65 max.
• Large power dissipation Ptot (800 mW) • Allowing to supply with the radial taping
27 min.
I Features
Cathode
Colored band indicates Vz classification
Parameter Repetitive peak forwa Panasonic data | | |
4 | MA7000 | Silicon Planar Type Zener Diodes
MAZ7000 Series (MA7000 Series)
Silicon planar type
Unit: mm
For stabilization of power supply s Features
φ 0.60±00.5
• Large power dissipation Ptot (800 mW) • Allowing to supply with the radial taping
27 min. Colored band indicatesVz classification
5.0 max.
27 min.
φ3.0 ma Panasonic data | | |
5 | MA7001 | Radiation Hard 512x9 Bit FIFO MA7001 MA7001
Radiation Hard 512x9 Bit FIFO
Replaces June 1999 version, DS3519-4.0 DS3519-5.0 January 2000
The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process provides si Dynex data | | |
6 | MA700A | Silicon epitaxial planar type Schottky Barrier Diodes (SBD)
MA111
MA700, MA700A
Silicon epitaxial planer type
For ordinary wave detection For super high speed switching
COLORED BAND INDICATES CATHODE
Unit : mm
ø0.45 max. 1 0.2max. 13 min.
s Features
q Low
q Temperature q Extremely q DO-34
coefficient of forward characteri Panasonic data | | |
7 | MA700A | SCHOTTKY BARRIER DIODES www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
MA700, MA700A
PRV : 15 - 30 V Io : 30 mA
FEATURES :
* Low forward voltage VF * Small temperature coefficent of forward characterisble * Small reverse current IR * High-densitty mounting ( 5mm pich insertion) is possible * Pb / RoHS F EIC diode | |
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Número de pieza | Descripción | Fabricantes | |
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