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MA80360L даташит

Функция этой детали – «SilICon Planar Type».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
MA80360L Panasonic
Panasonic
  Silicon planar type

Zener Diodes MAZ8000 Series Silicon planar type Unit : mm For stabilization of power supply K A 0.625 I Features • Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) • Extremely good rising performance (in the low-current range) • Easy-to-select the optimum diode because of their finely divided zener-voltage ranks • Guaranteed reliability, equivalent to that of conventional products (Mini type package) • Allowing to reduce the mounting area, thick
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Это результат поиска, начинающийся с "80360L", "MA803"

Номер в каталоге Производители Описание PDF
AS8C803600 Alliance Semiconductor
Alliance Semiconductor

3.3V Synchronous SRAMs

256K X 36, 512K X 18 3.3V Synchronous SRAMs AS8C803600 3.3V I/O, Burst Counter AS8C801800 Pipelined Outputs, Single Cycle Deselect Features 256K x 36, 512K x 18 memory configurations Supports high system speed: – 150MHz 3.8ns clock access time ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆
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AS8C803600-QC150N Alliance Semiconductor
Alliance Semiconductor

3.3V Synchronous SRAMs

256K X 36, 512K X 18 3.3V Synchronous SRAMs AS8C803600 3.3V I/O, Burst Counter AS8C801800 Pipelined Outputs, Single Cycle Deselect Features 256K x 36, 512K x 18 memory configurations Supports high system speed: – 150MHz 3.8ns clock access time ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆
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AS8C803601 Alliance Semiconductor
Alliance Semiconductor

3.3V Synchronous ZBT SRAMs

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs ◆ AS8C803601 AS8C801801 Address and control signals are applied to the SRAM during one clock cycle, and two cycles later the associated data cycle occurs, be it read or
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AS8C803601-QC150N Alliance Semiconductor
Alliance Semiconductor

3.3V Synchronous ZBT SRAMs

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs ◆ AS8C803601 AS8C801801 Address and control signals are applied to the SRAM during one clock cycle, and two cycles later the associated data cycle occurs, be it read or
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DS_K7N803601B Samsung semiconductor
Samsung semiconductor

256Kx36 & 512Kx18-Bit Pipelined NtRAM

K7N803601B K7N801801B Document Title 256Kx36 & 512Kx18 Pipelined NtRAMTM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 1.0 History 1. Initial document. 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at
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K7A803600B-QC14 Samsung semiconductor
Samsung semiconductor

256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

K7A803609B K7A801809B Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. cha
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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