|
MA80360L даташитФункция этой детали – «SilICon Planar Type». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MA80360L | Panasonic |
Silicon planar type Zener Diodes
MAZ8000 Series
Silicon planar type
Unit : mm
For stabilization of power supply
K A
0.625
I Features
• Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) • Extremely good rising performance (in the low-current range) • Easy-to-select the optimum diode because of their finely divided zener-voltage ranks • Guaranteed reliability, equivalent to that of conventional products (Mini type package) • Allowing to reduce the mounting area, thick |
Это результат поиска, начинающийся с "80360L", "MA803" |
Номер в каталоге | Производители | Описание | |
AS8C803600 | Alliance Semiconductor |
3.3V Synchronous SRAMs 256K X 36, 512K X 18 3.3V Synchronous SRAMs AS8C803600 3.3V I/O, Burst Counter AS8C801800 Pipelined Outputs, Single Cycle Deselect
Features
256K x 36, 512K x 18 memory configurations Supports high system speed: – 150MHz 3.8ns clock access time
◆ ◆ ◆ ◆ ◆ ◆
◆ ◆
|
|
AS8C803600-QC150N | Alliance Semiconductor |
3.3V Synchronous SRAMs 256K X 36, 512K X 18 3.3V Synchronous SRAMs AS8C803600 3.3V I/O, Burst Counter AS8C801800 Pipelined Outputs, Single Cycle Deselect
Features
256K x 36, 512K x 18 memory configurations Supports high system speed: – 150MHz 3.8ns clock access time
◆ ◆ ◆ ◆ ◆ ◆
◆ ◆
|
|
AS8C803601 | Alliance Semiconductor |
3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs
◆
AS8C803601 AS8C801801
Address and control signals are applied to the SRAM during one clock cycle, and two cycles later the associated data cycle occurs, be it read or |
|
AS8C803601-QC150N | Alliance Semiconductor |
3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs
◆
AS8C803601 AS8C801801
Address and control signals are applied to the SRAM during one clock cycle, and two cycles later the associated data cycle occurs, be it read or |
|
DS_K7N803601B | Samsung semiconductor |
256Kx36 & 512Kx18-Bit Pipelined NtRAM K7N803601B K7N801801B
Document Title
256Kx36 & 512Kx18 Pipelined NtRAMTM
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
Revision History
Rev. No. 0.0 0.1 0.2 1.0 History 1. Initial document. 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at |
|
K7A803600B-QC14 | Samsung semiconductor |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. cha |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |