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MA81600L даташит

Функция этой детали – «SilICon Planar Type».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
MA81600L Panasonic
Panasonic
  Silicon planar type

Zener Diodes MAZ8000 Series Silicon planar type Unit : mm For stabilization of power supply K A 0.625 I Features • Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) • Extremely good rising performance (in the low-current range) • Easy-to-select the optimum diode because of their finely divided zener-voltage ranks • Guaranteed reliability, equivalent to that of conventional products (Mini type package) • Allowing to reduce the mounting area, thick
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Это результат поиска, начинающийся с "81600L", "MA816"

Номер в каталоге Производители Описание PDF
IC42S81600L Integrated Circuit Solution
Integrated Circuit Solution

4M x 8M x 4 Banks SDRAM

IC42S81600/IC42S81600L IC42S16800/IC42S16800L Document Title 4(2)M x 8(16) Bit x 4 Banks (128-MBIT) SDRAM Revision History Revision No 0A 0B 0C 0D 0E History Initial Draft Corrected typo on PIN FUNCTIONS and revise DC OPERATING CONDITIONS Append two parameters tDPL ,tDAL;correc
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81600B Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

Tunable Laser Source Family

Agilent 81600B Tunable Laser Source Family Technical Specifications August 2007 The Agilent 81600B Tunable Laser Source Family offers the full wavelength range from 1260 nm to 1640 nm with the minimum number of lasers and no wavelength gaps. This provides te
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IC42S81600 Integrated Circuit Solution
Integrated Circuit Solution

4M x 8M x 4 Banks SDRAM

IC42S81600/IC42S81600L IC42S16800/IC42S16800L Document Title 4(2)M x 8(16) Bit x 4 Banks (128-MBIT) SDRAM Revision History Revision No 0A 0B 0C 0D 0E History Initial Draft Corrected typo on PIN FUNCTIONS and revise DC OPERATING CONDITIONS Append two parameters tDPL ,tDAL;correc
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IS42LS81600A Integrated Circuit Solution
Integrated Circuit Solution

128-MBIT SYNCHRONOUS DRAM

IS42S81600A, IS42LS81600A IS42S16800A, IS42LS16800A IS42S32400A, IS42LS32400A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 133 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding r
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IS42RM81600E ISSI
ISSI

128Mb Mobile Synchronous DRAM

IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Pro
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IS42S81600A Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc

16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

IS42S81600A, IS42S16800A, IS42S32400A, 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166,143,100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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