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MA81600L даташитФункция этой детали – «SilICon Planar Type». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MA81600L | Panasonic |
Silicon planar type Zener Diodes
MAZ8000 Series
Silicon planar type
Unit : mm
For stabilization of power supply
K A
0.625
I Features
• Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) • Extremely good rising performance (in the low-current range) • Easy-to-select the optimum diode because of their finely divided zener-voltage ranks • Guaranteed reliability, equivalent to that of conventional products (Mini type package) • Allowing to reduce the mounting area, thick |
Это результат поиска, начинающийся с "81600L", "MA816" |
Номер в каталоге | Производители | Описание | |
IC42S81600L | Integrated Circuit Solution |
4M x 8M x 4 Banks SDRAM IC42S81600/IC42S81600L IC42S16800/IC42S16800L
Document Title
4(2)M x 8(16) Bit x 4 Banks (128-MBIT) SDRAM
Revision History
Revision No
0A 0B 0C 0D 0E
History
Initial Draft Corrected typo on PIN FUNCTIONS and revise DC OPERATING CONDITIONS Append two parameters tDPL ,tDAL;correc |
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81600B | Agilent(Hewlett-Packard) |
Tunable Laser Source Family Agilent 81600B Tunable Laser Source Family
Technical Specifications
August 2007
The Agilent 81600B Tunable Laser Source Family offers the full wavelength range from 1260 nm to 1640 nm with the minimum number of lasers and no wavelength gaps. This provides te |
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IC42S81600 | Integrated Circuit Solution |
4M x 8M x 4 Banks SDRAM IC42S81600/IC42S81600L IC42S16800/IC42S16800L
Document Title
4(2)M x 8(16) Bit x 4 Banks (128-MBIT) SDRAM
Revision History
Revision No
0A 0B 0C 0D 0E
History
Initial Draft Corrected typo on PIN FUNCTIONS and revise DC OPERATING CONDITIONS Append two parameters tDPL ,tDAL;correc |
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IS42LS81600A | Integrated Circuit Solution |
128-MBIT SYNCHRONOUS DRAM IS42S81600A, IS42LS81600A IS42S16800A, IS42LS16800A IS42S32400A, IS42LS32400A
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
FEATURES
• Clock frequency: 133 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding r |
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IS42RM81600E | ISSI |
128Mb Mobile Synchronous DRAM IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E
16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM
FEATURES
• Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Pro |
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IS42S81600A | Integrated Silicon Solution Inc |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM IS42S81600A, IS42S16800A, IS42S32400A,
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
FEATURES
• Clock frequency: 166,143,100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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