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MA86101 даташитФункция этой детали – «(ma Series) High Frequency CeramIC Capacitors». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MA86101 | Murata Electronics |
(MA Series) High Frequency Ceramic Capacitors APPLICATION SPECIFIC CAPACITORS HIGH FREQUENCY CERAMIC CAPACITORS MA/MB Series
OUTSTANDING CHARACTERISTICS
I Miniature size I Very high Q at high frequencies I High RF power capabilities I Impervious to environmental conditions I Low dissipation factors I Excellent retrace capability (not applicable for X7R styles) I High temperature stability I Low noise I Meets Mil-55681 with respect to: Shock, Vibration, Moisture Resistance, Solderability, Barometric Pressure, Temperature Cycling, Immersion and Salt Spray
ADDITIONAL |
Это результат поиска, начинающийся с "86101", "MA86" |
Номер в каталоге | Производители | Описание | |
FDMS86101 | Fairchild Semiconductor |
N-Channel MOSFET FDMS86101 N-Channel PowerTrench® MOSFET
October 2012
FDMS86101
N-Channel PowerTrench® MOSFET
100 V, 60 A, 8 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored |
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FDMS86101A | Fairchild Semiconductor |
N-Channel MOSFET FDMS86101A N-Channel PowerTrench® MOSFET
April 2012
FDMS86101A
N-Channel PowerTrench® MOSFET
100 V, 60 A, 8 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored |
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FDMS86101DC | Fairchild Semiconductor |
N-Channel MOSFET FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET
February 2012
FDMS86101DC
N-Channel Dual CoolTM Power Trench® MOSFET
100 V, 60 A, 7.5 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A Max rDS(on) = 12 mΩ a |
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TS86101G2B | e2v |
4:1 10-bit 1.2 Gsps MUXDAC TS86101G2B
4:1 10-bit 1.2 Gsps MUXDAC
Datasheet
Main Features
• 10-bit Resolution • 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical • 4:1 Integrated Parallel MUX • PECL/LVDS Differential Data and Clock Inputs • 2 Vpp Differential Analog Output Swing • Output I |
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TS86101G2B | ATMEL Corporation |
4:1 10-bit 1.2 Gsps MUX-DAC
Main Features
• • • • • • • • • • •
10-bit Resolution 1.2 Gsps Guaranteed Conversion Rate, 1.4 Gsps Typical 4:1 Integrated Parallel MUX PECL/LVDS Differential Data and Clock Inputs Programmable DSP Clock 2 Vpp Differential Analog Output |
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MA862 | Panasonic |
Silicon epitaxial planar type Band Switching Diodes
MA4X862
Silicon epitaxial planar type
Unit : mm
For band switching I Features
• Two electrically isolated elements incorporated • Small diode capacitance CD • Low forward dynamic resistance rf • Optimum for a band switching of a tuner
2.8 − 0.3 |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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