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MAAPGM0078-DIE даташит

Функция этой детали – «Amplifier».



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Номер в каталоге Производители Описание PDF
MAAPGM0078-DIE Tyco Electronics
Tyco Electronics
  Amplifier

Amplifier, Power, 12W 2.0-6.0 GHz Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage (8-10V) Operation ♦ MSAG™ Process MAAPGM0078-DIE Rev B Preliminary Datasheet Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performan
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Это результат поиска, начинающийся с "0078", "MAAPGM0078-"

Номер в каталоге Производители Описание PDF
APT10078BFLL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

APT10078BFLL APT10078SFLL 1000V 14A 0.780W BFLL D3PAK TO-247 POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowe
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APT10078BLL Advanced Power Technology
Advanced Power Technology

Power MOS 7 MOSFET

APT10078BLL APT10078SLL 1000V 14A 0.780Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly low
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APT10078SFLL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

APT10078BFLL APT10078SFLL 1000V 14A 0.780W BFLL D3PAK TO-247 POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowe
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APT10078SLL Advanced Power Technology
Advanced Power Technology

Power MOS 7 MOSFET

APT10078BLL APT10078SLL 1000V 14A 0.780Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly low
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D78F0078 NEC
NEC

UPD78F0078

User’s Manual µPD780078, 780078Y Subseries 8-Bit Single-Chip Microcontrollers µPD780076 µPD780078 µPD78F0078 µPD780076Y µPD780078Y µPD78F0078Y Datasheet.esaSheet.net/ Document No. U14260EJ3V1UD00 (3rd edition) Date Published August 2004 N CP(K) 2000, 2003 Printed in Japan
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HS00-00078 ETC
ETC

10Base Networking Products

Electrical / Environmental 10Base Networking Products  Sr H o R liant fo p m o C ls ‘LF’ M ode • • • • • Meets the required 1500 Vrms line isolation Standard Operating Temperature Range 0°C to +70°C Extended Operating Temperature Range -40°C to +
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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