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MAAPGM0078-DIE даташитФункция этой детали – «Amplifier». |
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Номер в каталоге | Производители | Описание | |
MAAPGM0078-DIE | Tyco Electronics |
Amplifier
Amplifier, Power, 12W 2.0-6.0 GHz
Features
♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage (8-10V) Operation ♦ MSAG™ Process
MAAPGM0078-DIE
Rev B Preliminary Datasheet
Description
The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performan |
Это результат поиска, начинающийся с "0078", "MAAPGM0078-" |
Номер в каталоге | Производители | Описание | |
APT10078BFLL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT10078BFLL APT10078SFLL
1000V 14A 0.780W
BFLL D3PAK
TO-247
POWER MOS 7TM
FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowe |
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APT10078BLL | Advanced Power Technology |
Power MOS 7 MOSFET APT10078BLL APT10078SLL
1000V 14A 0.780Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS 7® by significantly low |
|
APT10078SFLL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT10078BFLL APT10078SFLL
1000V 14A 0.780W
BFLL D3PAK
TO-247
POWER MOS 7TM
FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowe |
|
APT10078SLL | Advanced Power Technology |
Power MOS 7 MOSFET APT10078BLL APT10078SLL
1000V 14A 0.780Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS 7® by significantly low |
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D78F0078 | NEC |
UPD78F0078 User’s Manual
µPD780078, 780078Y Subseries
8-Bit Single-Chip Microcontrollers
µPD780076 µPD780078 µPD78F0078 µPD780076Y µPD780078Y µPD78F0078Y
Datasheet.esaSheet.net/
Document No. U14260EJ3V1UD00 (3rd edition) Date Published August 2004 N CP(K) 2000, 2003 Printed in Japan |
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HS00-00078 | ETC |
10Base Networking Products Electrical / Environmental
10Base Networking Products
Sr H o R liant fo p m o C ls
‘LF’ M ode
• • • • •
Meets the required 1500 Vrms line isolation Standard Operating Temperature Range 0°C to +70°C Extended Operating Temperature Range -40°C to + |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |