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MACH120-15JC даташит

Функция этой детали – «High-performance Ee Cmos Programmable LogIC».



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Номер в каталоге Производители Описание PDF
MACH120-15JC Lattice
Lattice
  High-Performance EE CMOS Programmable Logic

1 FINAL MACH 1 & 2 FAMILIES COM’L: -12/15 IND: -18 Lattice Semiconductor MACH120-12/15 High-Performance EE CMOS Programmable Logic MACH 1 & 2 Families DISTINCTIVE CHARACTERISTICS x 68 Pins in PLCC x 48 Macrocells x 12 ns tPD Commercial, 18 ns tPD Industrial x x x x x x x 77 MHz fCNT Commercial 48 I/Os; 4 dedicated inputs; 4 dedicated inputs/clocks 48 Outputs 48 Flip-flops; 4 clock choices 4 “PALCE26V12” blocks SpeedLocking™ for guaranteed fixed timing Pin-compatible with the MACH221 GENERAL DESCRIPTIO
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Это результат поиска, начинающийся с "120", "MACH120-1"

Номер в каталоге Производители Описание PDF
02N120 Infineon Technologies
Infineon Technologies

SKP02N120

Datasheet.esaSheet4U.net SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Techno
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0805CS-120E DELTA
DELTA

WIRE-WOUND CHIP INDUCTOR

1. Part Description 1.1 Part Numbering (Example) ( Ex. ) 0805 C S - 120 E J T S SIZE. 0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm SHAPE. C : C SHAPE H : H SHAPE M : MOLDING PROFILE. S: STANDARD T: LOW PROFILE Q:H
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0805CS-120X Coilcraft
Coilcraft

(0805CS Series) Chip Inductors

Document 100-1 ChipInductors–0805CSSeries(2012) These ultra-compact inductors provide exceptional Q values, even at high frequencies. They have a ceramic body and wire wound construction to provide the highest SRFs available in 0805 size. Part number 1 Coi
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0809LD120 GHZ Technology
GHZ Technology

120 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utiliz
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1.5CE120A Central Semiconductor
Central Semiconductor

UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS

1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi-
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1.5CE120CA Central Semiconductor
Central Semiconductor

UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS

1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi-
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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