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MAGX-011086 даташитФункция этой детали – «Gan Wideband Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MAGX-011086 | MA-COM |
GaN Wideband Transistor MAGX-011086
GaN Wideband Transistor 28 V, 4 W DC - 6 GHz
Features
GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 6 GHz 28 V Operation 9 dB Gain at 5.8 GHz 45% Drain Efficiency at 5.8 GHz 100% RF Tested Thermally-Enhanced 4 mm 24-Lead QFN RoHS* Compliant
Rev. V1
Description
The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device |
Это результат поиска, начинающийся с "MAGX", "MAGX-011" |
Номер в каталоге | Производители | Описание | |
MAGX-000025-150000 | MA-COM |
Power Transistor MAGX-000025-150000
GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz
Features
GaN on SiC Transistor Technology Broadband Unmatched Transistor Common-Source Configuration +50 V Typical Operation Class AB Operation RoHS* Compliant and 260°C Reflow Compatib |
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MAGX-000035-010000 | MA-COM |
Power Transistor MAGX-000035-010000 MAGX-000035-01000S
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz
Features
GaN Depletion-Mode HEMT Microwave Transistor
Common-Source configuration No internal matching Broadband Class AB operation RoHS* Compliant |
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MAGX-000035-01000P | MA-COM |
Pulsed Transistor MAGX-000035-01000P
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - 3.5 GHz
Rev. V2
Features
GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed / CW Applications 50 V Typical Bias, Class AB Common-Source Configuration Therma |
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MAGX-000035-01000S | MA-COM |
Power Transistor MAGX-000035-010000 MAGX-000035-01000S
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz
Features
GaN Depletion-Mode HEMT Microwave Transistor
Common-Source configuration No internal matching Broadband Class AB operation RoHS* Compliant |
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MAGX-000035-015000 | MA-COM |
Power Transistor MAGX-000035-015000 MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz
Features
GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Package (Flanged: Cu/W,
Flangeles |
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MAGX-000035-01500S | MA-COM |
Power Transistor MAGX-000035-015000 MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz
Features
GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Package (Flanged: Cu/W,
Flangeles |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |