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MAPDCT0026 даташит

Функция этой детали – «2 Way Power Divider».



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Номер в каталоге Производители Описание PDF
MAPDCT0026 M/A-COM
M/A-COM
  2 Way Power Divider

RoHS Compliant 2 Way 0º Power Divider 5-2400MHz Features • • • • • • Surface Mount 2 Way 0 degree 260°C Reflow Compatible RoHS* Compliant RoHS version of MAPDCT0012. Available on Tape and Reel. Reel quantity 2000 MAPDCT0026 V1P Schematic Description Case Style: SM-156 Pin Configuration Pin No. 1 Function Input Not connected (ground) Output 1 Output 2 Not connected (ground) Ground 2 3 4 5 6 Ordering Information Part Number MAPDCT0026TR MAPD-007996-CT26TB Package 2000 piece reel C
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Это результат поиска, начинающийся с "0026", "MAPDCT0"

Номер в каталоге Производители Описание PDF
30026-13 National Semiconductor
National Semiconductor

Geode GXLV Processor Series Low Power Integrated x86 Solutions

Geode™ GXLV Processor Series Low Power Integrated X86 Solutions April 2000 Geode™ GXLV Processor Series Low Power Integrated x86 Solutions General Description The National Semiconductor® Geode™ GXLV processor series is a new line of integrated processors specifically des
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APT10026JFLL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

APT10026JFLL 1000V 30A 0.140W POWER MOS 7TM FREDFET S G D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Po
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APT10026JLL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

APT10026JLL 1000V 30A 0.260W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combine
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APT10026JN Advanced Power Technology
Advanced Power Technology

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D S G D S G S SO 2 T- 27 APT10026JN 1000V 33A 0.26Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-So
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APT10026L2FLL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

APT10026L2FLL 1000V 38A 0.260W POWER MOS 7TM FREDFET TO-264 Max Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg
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APT10026L2LL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

APT10026L2LL 1000V 38A 0.260W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combin
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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