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MAPDCT0026 даташитФункция этой детали – «2 Way Power Divider». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MAPDCT0026 | M/A-COM |
2 Way Power Divider RoHS Compliant
2 Way 0º Power Divider 5-2400MHz
Features
• • • • • • Surface Mount 2 Way 0 degree 260°C Reflow Compatible RoHS* Compliant RoHS version of MAPDCT0012. Available on Tape and Reel. Reel quantity 2000
MAPDCT0026 V1P
Schematic
Description
Case Style: SM-156
Pin Configuration
Pin No.
1
Function
Input Not connected (ground) Output 1 Output 2 Not connected (ground) Ground
2 3 4 5 6
Ordering Information
Part Number
MAPDCT0026TR MAPD-007996-CT26TB
Package
2000 piece reel C |
Это результат поиска, начинающийся с "0026", "MAPDCT0" |
Номер в каталоге | Производители | Описание | |
30026-13 | National Semiconductor |
Geode GXLV Processor Series Low Power Integrated x86 Solutions Geode™ GXLV Processor Series Low Power Integrated X86 Solutions
April 2000
Geode™ GXLV Processor Series Low Power Integrated x86 Solutions
General Description
The National Semiconductor® Geode™ GXLV processor series is a new line of integrated processors specifically des |
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APT10026JFLL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT10026JFLL
1000V 30A 0.140W
POWER MOS 7TM
FREDFET
S G D S
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Po |
|
APT10026JLL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT10026JLL
1000V 30A 0.260W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combine |
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APT10026JN | Advanced Power Technology |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
S G D
S
G S
SO
2 T-
27
APT10026JN 1000V 33A 0.26Ω
"UL Recognized" File No. E145592 (S)
ISOTOP®
POWER MOS IV ®
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-So |
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APT10026L2FLL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT10026L2FLL
1000V 38A 0.260W
POWER MOS 7TM
FREDFET
TO-264 Max
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg |
|
APT10026L2LL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT10026L2LL
1000V 38A 0.260W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combin |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |