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MAPL-000817-015CPC даташитФункция этой детали – «Rf Power Field Effect Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MAPL-000817-015CPC | Tyco Electronics |
RF Power Field Effect Transistor
RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V
7/27/06
Preliminary
MAPL-000817-015CPC
Features
Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz, 26Vdc, CW • Typical Power Output: 16.5W • Gain: 17.0dB • Efficiency: 50% • 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz
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Package Style
MAPL-000817-015CPC
Maximum Ratings
Parameter Drain—Source Voltage Gate—Source Voltage |
Это результат поиска, начинающийся с "MAPL", "MAPL-000817-015" |
Номер в каталоге | Производители | Описание | |
MAPL-000817-015C00 | Tyco Electronics |
RF Power Field Effect Transistor
RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V
1/11/06
Preliminary
MAPL-000817-015C00
Features
Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at |
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MAPLST0810-030CF | Tyco Electronics |
RF Power Field Effect Transistor
RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 30W, 26V
5/14/04
Preliminary
MAPLST0810-030CF
Features
Q
Package Style
Q
Q Q Q
Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz |
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MAPLST0810-045CF | Tyco Electronics |
RF Power Field Effect Transistor
RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 45W, 26V
5/21/04
Preliminary
MAPLST0810-045CF
Features
Q
Package Style
Q
Q Q Q
Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz |
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MAPLST0810-090CF | Tyco Electronics |
RF Power Field Effect Transistor
RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 90W, 26V
5/14/04
Preliminary
MAPLST0810-090CF
Features
Q
Package Style
Q
Q Q Q Q
Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960M |
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MAPLST0822-002PP | Tyco Electronics |
RF Power Field Effect Transistor
RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V
4/14/05
Preliminary
MAPLST0822-002PP
Features
Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion P |
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MAPLST1617-030CF | Tyco Electronics |
RF Power Field Effect Transistor
RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V
5/5/05
Preliminary
MAPLST1617-030CF
Features
Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance (IMD=-30 dBc): Average Output Power: 15W |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |