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MAPLST2122-060CF даташитФункция этой детали – «Rf Power Field Effect Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MAPLST2122-060CF | Tyco Electronics |
RF Power Field Effect Transistor
RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V
4/6/2005
Preliminary
MAPLST2122-060CF
Features
Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
Q Q Q
Package Style
60W output power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Q Output Power: 7.5W (typ.) Q Gain: 12dB (typ.) Q Efficiency: 16% (typ.) 10:1 VSWR Rugg |
Это результат поиска, начинающийся с "2122", "MAPLST2122-06" |
Номер в каталоге | Производители | Описание | |
2SC2122 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2122
DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage
PINNING(see fig.2) PIN 1 2 3 Ba |
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2SD2122 | Hitachi Semiconductor |
Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1409(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SD2122(L)/(S), 2SD2123(L)/(S)
Absolute Maximum |
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2SD2122L | Hitachi Semiconductor |
Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1409(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SD2122(L)/(S), 2SD2123(L)/(S)
Absolute Maximum |
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2SD2122S | Hitachi Semiconductor |
Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1409(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SD2122(L)/(S), 2SD2123(L)/(S)
Absolute Maximum |
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AMN2122 | AMIMON |
WHDI Transmitter AMN2120/2/3 WHDI™ Transmitter Family
Data Sheet
Version 0.1
Version 0.1
AMIMON Confidential
i
Important Notice
Version 0.1
AMIMON Confidential
ii
Important Notice
Important Notice
AMIMON Ltd. reserves the right to make corrections, modifications, enhancements, improve |
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AP2122 | BCD Semiconductor |
EXTREMELY LOW NOISE LDO REGULATOR HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
General Description
Features
Data Sheet AP2122
The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs con-
·
Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.5V Version)
si |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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